SCHEMBL1370967

SCHEMBL1370967

O=[Ir].[BaH2]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27758142 0.87
SCHEMBL25031 0.87
SCHEMBL224984 0.75
SCHEMBL11787444 0.75
SCHEMBL1483599 0.75
SCHEMBL18689802 0.75
SCHEMBL10851569 0.75
SCHEMBL1741982 0.75
SCHEMBL1988041 0.75
SCHEMBL10848443 0.75

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122061189-A Sulfur-doped titanium nitride carrier-supported iridium catalyst and preparation method and application thereof 中国科学院长春应用化学研究所 2026-05-19 CN claimed
CN-119932608-A Amorphous carrier supported iridium catalyst and preparation method and application thereof 中国科学院长春应用化学研究所 2025-05-06 CN claimed
WO-2024241059-A1 CATALYST AND PROCESS JOHNSON MATTHEY PUBLIC LIMITED COMPANY (GB) 2024-11-28 WO claimed
US-8034745-B2 High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods GOYAL AMIT 2011-10-11 US claimed
US-20100267225-A1 Method of manufacturing semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-10-21 US claimed
US-20080176749-A1 High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods GOYAL AMIT 2008-07-24 US claimed
CN-122061189-A Sulfur-doped titanium nitride carrier-supported iridium catalyst and preparation method and application thereof 中国科学院长春应用化学研究所 2026-05-19 CN disclosed
CN-119932608-A Amorphous carrier supported iridium catalyst and preparation method and application thereof 中国科学院长春应用化学研究所 2025-05-06 CN disclosed
CN-119411155-A High-performance iridium-based oxide electrocatalyst material and simple preparation method thereof 中国科学技术大学 2025-02-11 CN disclosed
WO-2024241059-A1 CATALYST AND PROCESS JOHNSON MATTHEY PUBLIC LIMITED COMPANY (GB) 2024-11-28 WO disclosed
CN-114700073-B Preparation method and application of atomically dispersed iridium-based composite material 中国科学院长春应用化学研究所 2023-12-19 CN disclosed
CN-112993158-A Capacitor structure and semiconductor device including the same 三星电子株式会社 2021-06-18 CN disclosed
US-8536098-B2 High performance superconducting devices enabled by three dimensionally ordered nanodots and/or nanorods GOYAL AMIT (US) 2013-09-17 US disclosed
US-20110287939-A1 High performance superconducting devices enabled by three dimensionally ordered nanodots and/or nanorods GOYAL AMIT (US) 2011-11-24 US disclosed
US-8034745-B2 High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods GOYAL AMIT 2011-10-11 US disclosed
US-20100267225-A1 Method of manufacturing semiconductor device SAMSUNG ELECTRONICS CO., LTD. (KR) 2010-10-21 US disclosed
US-20080176749-A1 High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods GOYAL AMIT 2008-07-24 US disclosed