⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL836201 | 0.71 | — | — | |
| SCHEMBL19988825 | 0.71 | — | — | |
| SCHEMBL13719025 | 0.67 | — | — | |
| SCHEMBL1172952 | 0.65 | — | — | |
| SCHEMBL24871 | 0.65 | — | — | |
| SCHEMBL726505 | 0.65 | — | — | |
| SCHEMBL16708317 | 0.65 | — | — | |
| SCHEMBL23441780 | 0.62 | — | — | |
| SCHEMBL21597012 | 0.62 | — | — | |
| Fluoride SCHEMBL1874110 | 0.62 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9354523-B2 | Composition for resist pattern-refinement, and fine pattern-forming method | JSR CORPORATION (JP) | 2016-05-31 | — | — | US | disclosed |
| US-20160011513-A1 | COMPOSITION FOR FORMING FINE RESIST PATTERN, AND FINE PATTERN-FORMING METHOD | JSR CORPORATION (JP) | 2016-01-14 | — | — | US | disclosed |
| US-9046769-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20140371466-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2014-12-18 | — | — | US | disclosed |
| US-8859191-B2 | Pattern-forming method, and composition for forming resist underlayer film | JSR CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-20120285929-A1 | PATTERN-FORMING METHOD, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM | JSR CORPORATION (JP) | 2012-11-15 | — | — | US | disclosed |