Phosphine

Phosphine

SCHEMBL137480

B.P.[SiH4]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Methane SCHEMBL17670000 0.87
Ammonia Solution, Strong SCHEMBL27920462 0.87
Phosphine SCHEMBL28197973 0.87
Phosphine SCHEMBL28848237 0.87
Fluoride SCHEMBL29033535 0.87
Phosphine SCHEMBL25436720 0.87
Phosphine SCHEMBL10628146 0.82
SCHEMBL641393 0.82
Phosphine SCHEMBL3339962 0.82
Phosphine SCHEMBL252500 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1958 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250366026-A1 SEMICONDUCTOR DEVICE TOSHIBA KK (JP) 2025-11-27 US claimed
CN-120201766-A Preparation method of semiconductor power device 上海维安半导体有限公司 2025-06-24 CN claimed
CN-222706889-U Silicon carbide diode chip structure 中国振华集团永光电子有限公司(国营第八七三厂) 2025-04-01 CN claimed
CN-113675327-B Method for manufacturing thermopile sensor 无锡莱斯能特科技有限公司 2025-02-14 CN claimed
CN-119421428-A Contact hole, preparation method thereof, semiconductor device and electronic equipment 上海积塔半导体有限公司 2025-02-11 CN claimed
CN-119403147-A IGBT device and manufacturing method thereof 上海积塔半导体有限公司 2025-02-07 CN claimed
CN-119208278-A Chip packaging structure, manufacturing method thereof and electronic equipment 华为技术有限公司 2024-12-27 CN claimed
CN-111697082-B Shielded gate trench semiconductor device and method of manufacturing the same 华羿微电子股份有限公司 2024-11-29 CN claimed
CN-113948608-B Method for removing coiled plating polysilicon of N-TOPCon battery 正泰新能科技股份有限公司 2024-10-01 CN claimed
CN-113658861-B Manufacturing method and structure of IGBT power device active layer 青岛佳恩半导体科技有限公司 2024-08-30 CN claimed
EP-0897193-A2 Process of making a multilevel metallization scheme with high planarization degree TEXAS INSTRUMENTS INCORPORATED (US) 1999-02-17 EP claimed
US-5702767-A USING AN ORGANOSILICON COMPOUND COMPLEX FLUID SYSTEMS, INC. (US) 1997-12-30 US claimed
EP-0792195-A1 NON-AMINIC PHOTORESIST ADHESION PROMOTERS FOR MICROELECTRONIC APPLICATIONS COMPLEX FLUID SYSTEMS, INC. (US) 1997-09-03 EP claimed
WO-1996015861-A1 NON-AMINIC PHOTORESIST ADHESION PROMOTERS FOR MICROELECTRONIC APPLICATIONS COMPLEX FLUID SYSTEMS, INC. (US) 1996-05-30 WO claimed
US-5449640-A Fabricating electrical contacts in semiconductor devices INMOS LIMITED (GB) 1995-09-12 US claimed
US-5393624-A Method and apparatus for manufacturing a semiconductor device TOKYO ELECTRON LIMITED (JP) 1995-02-28 US claimed
US-5304831-A Low on-resistance power MOS technology SILICONIX INCORPORATED (US) 1994-04-19 US claimed
EP-0403050-A2 Fabricating electrical contacts in semiconductor devices STMicroelectronics Limited (GB) 1990-12-19 EP claimed
EP-0349605-A1 SEMICONDUCTOR DEVICES WITH PROGRAMMABLE PASSIVE-COMPONENT LAYER AND PROCESS FOR PRODUCING THE SAME LSI LOGIC EUROPE PLC (GB) 1990-01-10 EP claimed
WO-1989004553-A1 SEMICONDUCTOR DEVICES WITH PROGRAMMABLE PASSIVE-COMPONENT LAYER AND PROCESS FOR PRODUCING THE SAME LSI LOGIC EUROPE PLC (GB) 1989-05-18 WO claimed