⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Phosphine SCHEMBL31187486 | 1.00 | — | — | |
| Phosphine SCHEMBL28208035 | 1.00 | — | — | |
| Phosphine SCHEMBL10628146 | 1.00 | — | — | |
| Phosphine SCHEMBL2429455 | 0.82 | — | — | |
| Water SCHEMBL22972927 | 0.82 | — | — | |
| Methane SCHEMBL14815554 | 0.82 | — | — | |
| Phosphine SCHEMBL975692 | 0.82 | — | — | |
| Fluoride SCHEMBL21356335 | 0.82 | — | — | |
| Phosphine SCHEMBL2533849 | 0.82 | — | — | |
| Phosphine SCHEMBL906192 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 8519 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-120775384-B | Nano aerogel/ceramic silicon rubber composite material, preparation method thereof and fireproof cable | ZHEJIANG TIANJIE INDUSTRIAL CORP. (CN) | 2026-05-26 | — | — | CN | claimed |
| CN-122060375-A | Corrosion-resistant fireproof explosion-proof material, preparation method thereof and application thereof in electric power tunnel | 南昌泰事达电气科技有限公司 | 2026-05-19 | — | — | CN | claimed |
| CN-122039202-A | Drawing method of vacancy type heavily-doped phosphorus silicon single crystal for inhibiting epitaxial stacking faults | 金瑞泓科技(衢州)有限公司 | 2026-05-15 | — | — | CN | claimed |
| CN-122036463-A | Method for preparing phenolic compound from alkylbenzene | 中国科学院大连化学物理研究所 | 2026-05-15 | — | — | CN | claimed |
| US-12622185-B2 | Method for manufacturing semiconductor silicon wafer composed of silicon wafer substrate and silicon monocrystalline epitaxial layer | GLOBALWAFERS JAPAN CO., LTD. (JP) | 2026-05-05 | — | — | US | claimed |
| US-20260123020-A1 | EMBEDDED STRESSORS IN EPITAXY SOURCE/DRAIN REGIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-04-30 | — | — | US | claimed |
| US-20260103001-A1 | INKJET CHIP STRUCTURE | MICROJET TECHNOLOGY CO., LTD. (TW) | 2026-04-16 | — | — | US | claimed |
| EP-4696696-A1 | IMMOBILIZED QUATERNARY PHOSPHONIUM SALT HAVING PHENOL DOMAIN, METHOD FOR PRODUCING SAME, AND CYCLIC CARBONATE PRODUCTION METHOD USING SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-02-18 | — | — | EP | claimed |
| US-20260040530-A1 | SEMICONDUCTOR DEVICE WITH INDEPENDENT SOURCE-DRAIN REGION PROFILES FOR LOW VOLTAGE AND HIGH VOLTAGE FINFET TRANSISTORS | MICRON TECHNOLOGY INC (US) | 2026-02-05 | — | — | US | claimed |
| US-20260006890-A1 | EPITAXIAL LAYERS IN SOURCE/DRAIN CONTACTS AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-01-01 | — | — | US | claimed |
| EP-0655776-A1 | Autoplanarizing process for the passivation of an integrated circuit | STMicroelectronics S.r.l. (IT) | 1995-05-31 | — | — | EP | claimed |
| CN-1096496-A | With the diethylamine is the template synthesized silicon-aluminum phosphate molecular sieve | DALIAN CHEMICAL PHYSICS INST (CN) | 1994-12-21 | — | — | CN | claimed |
| WO-1994004709-A1 | UPGRADING TITANIFEROUS MATERIALS | TECHNOLOGICAL RESOURCES PTY. LIMITED (AU) | 1994-03-03 | — | — | WO | claimed |
| CN-1020224-C | Three-D magnetic-vector sensor and its production method | HUADONG TEACHERS UNIV (CN) | 1993-03-31 | — | — | CN | claimed |
| CN-1047940-A | A kind of three-D magnetic-vector sensor and manufacture method thereof | HUADONG TEACHERS UNIV (CN) | 1990-12-19 | — | — | CN | claimed |
| WO-1990007018-A1 | GOLD COLORED PALLADIUM - INDIUM ALLOYS | IVOCLAR NORTH AMERICA, INC. (US) | 1990-06-28 | — | — | WO | claimed |
| CN-1004889-B | Preparation method of medium-low resistance Czochralski silicon single crystal | 浙江大学 | 1989-07-26 | — | — | CN | claimed |
| CN-88103168-A | In low temperature, use the phosphorous planar doped source | — | 1988-12-28 | — | — | CN | claimed |
| CN-88102558-A | A kind of preparation method of medium or low resistance czochralski silicon monocrystal | — | 1988-12-14 | — | — | CN | claimed |
| US-4317844-A | Semiconductor device having a body of amorphous silicon and method of making the same | RCA CORPORATION (US) | 1982-03-02 | — | — | US | claimed |