SCHEMBL13898615

SCHEMBL13898615

CCC(C)c1ccc(C(=O)OC)cc1O

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 4/20 0.57
CA1 P00915 4/20 0.57
CA2 P00918 4/20 0.57
CA7 P43166 4/20 0.57
CA9 Q16790 4/20 0.57
CA14 Q9ULX7 4/20 0.57
XDH P47989 2/20 0.57
KDM4E B2RXH2 7/20 0.48
LMNA P02545 5/20 0.48
ALDH1A1 P00352 5/20 0.48
HPGD P15428 4/20 0.47
MAPT P10636 4/20 0.47
HSD17B10 Q99714 3/20 0.47
KMT2A Q03164 2/20 0.47
SMN1; SMN2 Q16637 2/20 0.47
MEN1 O00255 1/20 0.47
TP53 P04637 1/20 0.47
ALOX15 P16050 1/20 0.47
ALOX12 P18054 1/20 0.47
HTT P42858 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL10368652 0.89 CA12 (0.59) CA12CA1CA2CA7CA9
SCHEMBL25868775 0.84 KDM4E (0.55) CA12CA1CA2CA7CA9
SCHEMBL11438477 0.83 CA1 (0.65) CA12CA1CA2CA7CA9
SCHEMBL22838421 0.83 MAPT (0.53) CA12CA1CA2CA7CA9
SCHEMBL25784426 0.82 TSHR (0.52) CA12CA1CA2CA7CA9
SCHEMBL8816549 0.80 SMN1; SMN2 (0.50) CA12CA1CA2CA7CA9
SCHEMBL17184624 0.79 CA1 (0.62) CA12CA1CA2CA7CA9
SCHEMBL14300240 0.79 KDM4E (0.52) CA12CA1CA2CA7CA9
SCHEMBL27334383 0.79 KDM4E (0.43) CA12CA1CA2CA7CA9
SCHEMBL13882183 0.78 CA12 (0.53) CA12CA1CA2CA7CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7498116-B2 Resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-7498116-B2 Resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-20080241750-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080241750-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed