SCHEMBL13985752

SCHEMBL13985752

O=C(NCCN1CCOCC1)C(F)(F)C(F)(F)F

nearest known ligand 0.57

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
LMNA P02545 4/20 0.55
CD274 Q9NZQ7 3/20 0.51
TDP1 Q9NUW8 1/20 0.50
CA12 O43570 1/20 0.49
CA1 P00915 1/20 0.49
CA2 P00918 1/20 0.49
CA9 Q16790 1/20 0.49
TSHR P16473 1/20 0.48
HSD17B10 Q99714 1/20 0.47
EPHX2 P34913 1/20 0.47
ALDH1A1 P00352 1/20 0.47
HTR1A P08908 1/20 0.47
MAOA P21397 1/20 0.47
MAOB P27338 1/20 0.47
KCNH2 Q12809 1/20 0.47

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13985749 0.91 LMNA (0.52) LMNACD274TDP1CA12CA1
SCHEMBL3750650 0.87 LMNA (0.58) LMNACD274TDP1CA12CA1
SCHEMBL13985634 0.84 LMNA (0.56) LMNACD274TDP1CA12CA1
SCHEMBL15025374 0.83 LMNA (0.51) LMNACD274TDP1CA12CA1
SCHEMBL15025303 0.81 LMNA (0.52) LMNACD274TDP1CA12CA1
SCHEMBL13985750 0.81 LMNA (0.52) LMNACD274TDP1CA12CA1
SCHEMBL15025306 0.81 LMNA (0.49) LMNACD274TDP1CA12CA1
SCHEMBL2698834 0.80 LMNA (0.62) LMNATDP1CA12CA1CA2
SCHEMBL15025309 0.79 LMNA (0.50) LMNACD274TDP1CA12CA1
SCHEMBL15025376 0.79 LMNA (0.47) LMNACD274TDP1CA12CA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9158191-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-13 US disclosed
US-9158191-B2 Chemically amplified negative resist composition, photo-curable dry film, making method, pattern forming process, and electric/electronic part protecting film SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-13 US disclosed
US-20130149493-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-13 US disclosed
US-20130149493-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION, PHOTO-CURABLE DRY FILM, MAKING METHOD, PATTERN FORMING PROCESS, AND ELECTRIC/ELECTRONIC PART PROTECTING FILM SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-06-13 US disclosed
US-7468236-B2 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-12-23 US disclosed
US-20070087287-A1 Amine compound, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2007-04-19 US disclosed