SCHEMBL1401574

SCHEMBL1401574

[Cr+3].[Cr+3].[Cr+3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[N-3].[Ta+5].[Ta+5].[Ta+5]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL65589 0.82
SCHEMBL930936 0.82
SCHEMBL33275 0.82
SCHEMBL3467470 0.82
SCHEMBL1796527 0.67
SCHEMBL19056832 0.67
SCHEMBL14958359 0.67
SCHEMBL16874147 0.67
SCHEMBL2539870 0.67
SCHEMBL1478768 0.67

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 69 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7045071-B2 Method for fabricating ferroelectric random access memory device HYNIX SEMICONDUCTOR INC. (KR) 2006-05-16 US claimed
US-20040129670-A1 Method for fabricating ferroelectric random access memory device HYNIX SEMICONDUCTOR INC. (KR) 2004-07-08 US claimed
CN-118139832-A Cubic boron nitride sintered body 住友电气工业株式会社 2024-06-04 CN disclosed
US-20240174576-A1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2024-05-30 US disclosed
EP-4079703-B1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC INDUSTRIES (JP) 2024-05-01 EP disclosed
EP-4079705-B1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC INDUSTRIES (JP) 2024-05-01 EP disclosed
CN-117957208-A Cubic boron nitride sintered body 住友电工硬质合金株式会社 2024-04-30 CN disclosed
US-11958782-B2 Cubic boron nitride sintered material SUMITOMO ELECTRIC HARDMETAL CORP. (JP) 2024-04-16 US disclosed
WO-2024034076-A1 SUPERABRASIVE GRAIN AND GRINDSTONE 住友電気工業株式会社 2024-02-15 WO disclosed
CN-117305689-A Martensitic heat-resistant steel for temperature of 630 ℃ or higher and preparation method thereof 天津重型装备工程研究有限公司 2023-12-29 CN disclosed
EP-4079706-B1 CUBIC BORON NITRIDE SINTERED MATERIAL SUMITOMO ELECTRIC HARDMETAL CORP (JP) 2023-12-27 EP disclosed
US-10029948-B2 Sintered material, tool including sintered material, and sintered material production method SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2018-07-24 US disclosed
US-20170253531-A1 SINTERED MATERIAL, TOOL INCLUDING SINTERED MATERIAL, AND SINTERED MATERIAL PRODUCTION METHOD SUMITOMO ELECTRIC INDUSTRIES, LTD. (JP) 2017-09-07 US disclosed
EP-3187476-A1 SINTERED BODY, TOOL USING SINTERED BODY, AND SINTERED BODY PRODUCTION METHOD Sumitomo Electric Industries, Ltd. (JP) 2017-07-05 EP disclosed
EP-1321820-B1 HALFTONE PHASE SHIFT PHOTOMASK AND BLANK FOR HALFTONE PHASE SHIFT PHOTOMASK DAINIPPON PRINTING CO LTD (JP) 2011-03-02 EP disclosed
US-7045071-B2 Method for fabricating ferroelectric random access memory device HYNIX SEMICONDUCTOR INC. (KR) 2006-05-16 US disclosed
US-6869736-B2 Halftone phase shift photomask and blank for halftone phase shift photomask DAI NIPPON PRINTING CO., LTD. (JP) 2005-03-22 US disclosed
US-20040129670-A1 Method for fabricating ferroelectric random access memory device HYNIX SEMICONDUCTOR INC. (KR) 2004-07-08 US disclosed
US-20030186135-A1 Halftone phase shift photomask and blank for halftone phase shift photomask DAI NIPPON PRINTING CO., LTD. (JP) 2003-10-02 US disclosed
EP-1321820-A1 HALFTONE PHASE SHIFT PHOTOMASK AND BLANK FOR HALFTONE PHASE SHIFT PHOTOMASK DAI NIPPON PRINTING CO., LTD. (JP) 2003-06-25 EP disclosed