SCHEMBL1409871

SCHEMBL1409871

CC(C)(C)OC(=O)C1CCC2CC(C(=O)O)CCC2C1

nearest known ligand 0.47

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
BTK Q06187 1/20 0.47
HRH3 Q9Y5N1 1/20 0.38
KMT2A Q03164 2/20 0.37
AKR1C3 P42330 1/20 0.36
AKR1C1 Q04828 1/20 0.36
HSD17B10 Q99714 1/20 0.35
CHRM2 P08172 1/20 0.34
CHRM1 P11229 1/20 0.34
CHRM3 P20309 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
PREP P48147 2/20 0.33
ACE P12821 1/20 0.33
MEN1 O00255 1/20 0.33
JAK1 P23458 2/20 0.32
NR1H2 P55055 1/20 0.32
JAK2 O60674 1/20 0.32
MAPK1 P28482 1/20 0.32
POLB P06746 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1409867 0.93 HRH3 (0.41) BTKHRH3KMT2ACHRM2CHRM1
SCHEMBL1586789 0.91 HRH3 (0.41) BTKHRH3CHRM2CHRM1CHRM3
SCHEMBL17754267 0.85 HRH3 (0.43) BTKHRH3KMT2AHSD17B10SMN1; SMN2
SCHEMBL1296379 0.84 BTK (0.61) BTKHRH3KMT2AAKR1C3AKR1C1
SCHEMBL1072603 0.83 HRH3 (0.46) BTKHRH3KMT2AHSD17B10CHRM2
SCHEMBL5264559 0.83 HRH3 (0.46) BTKHRH3KMT2AHSD17B10CHRM2
SCHEMBL10328238 0.83 HRH3 (0.46) BTKHRH3KMT2AHSD17B10CHRM2
SCHEMBL2450476 0.82 BTK (0.44) BTKHRH3KMT2AHSD17B10CHRM2
SCHEMBL30171988 0.82 HRH3 (0.41) BTKHRH3KMT2AHSD17B10CHRM2
SCHEMBL1297691 0.82 BTK (0.44) BTKHRH3KMT2AAKR1C3AKR1C1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 72 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-1182188-B1 Method for producing carboxylic acid tertiary alkyl ester HONSHU CHEMICAL IND (JP) 2011-03-09 EP disclosed
US-7666967-B2 Ester compound, polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-02-23 US disclosed
US-7592407-B2 a perfluorinated ester compound containing a pyran ring, a hydroxy or protected hydroxy group; able to polymerized into a fluorinated polymer which is used as a base polymer to formulate a resist composition having transparency to laser light; alkali development amenability, and dry etch resistance SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-09-22 US disclosed
US-7488567-B2 Polymer, resist composition and patterning process PANASONIC CORPORATION (JP) 2009-02-10 US disclosed
EP-1236745-B1 Silicon-containing polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2008-07-23 EP disclosed
US-7378218-B2 Polymer, resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-05-27 US disclosed
US-7344827-B2 Fine contact hole forming method employing thermal flow process SHIN-ETSU CHEMICAL CO., INC. (JP) 2008-03-18 US disclosed
EP-1652846-B1 Polymerizable fluorinated compound, making method, polymer, resist composition and patterning process SHINETSU CHEMICAL CO (JP) 2007-08-22 EP disclosed
US-7241553-B2 Polymer, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-07-10 US disclosed
US-7232638-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-06-19 US disclosed
US-20020051936-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-05-02 US disclosed
US-20020048724-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-04-25 US disclosed
EP-1182188-A2 Method for producing carboxylic acid tertiary alkyl ester Honshu Chemical Industry Co., Ltd. (JP) 2002-02-27 EP disclosed
US-20020012871-A1 Polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-31 US disclosed
US-20020004569-A1 Polymer, chemically amplified resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2002-01-10 US disclosed
US-20010055727-A1 Resist material and method for pattern formation SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-12-27 US disclosed
US-20010038969-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. OF (JP) 2001-11-08 US disclosed
US-20010033989-A1 Novel polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-10-25 US disclosed
US-20010018162-A1 Novel polymers, chemical amplification resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-30 US disclosed
EP-1126322-A2 Fluorine-containing polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2001-08-22 EP disclosed