SCHEMBL14315746

SCHEMBL14315746

O=S(=O)(O)c1c(C2CCCCC2)cc(F)cc1C1CCCCC1

nearest known ligand 0.42

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
PTGDR2 Q9Y5Y4 4/20 0.42
PTGDR Q13258 2/20 0.36
PTGS2 P35354 1/20 0.36
KMT2A Q03164 2/20 0.34
HSP90AA1 P07900 1/20 0.34
KDM4E B2RXH2 1/20 0.34
MEN1 O00255 1/20 0.34
MAPT P10636 1/20 0.34
SCN9A Q15858 2/20 0.34
F2RL1 P55085 2/20 0.33
CA12 O43570 1/20 0.33
CA1 P00915 1/20 0.33
CA2 P00918 1/20 0.33
CA9 Q16790 1/20 0.33
SCN5A Q14524 1/20 0.32
TLR8 Q9NR97 1/20 0.31
NUDT1 P36639 1/20 0.31
BACE1 P56817 1/20 0.31
CEL P19835 1/20 0.31
OPRL1 P41146 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2758386 0.84 KMO (0.38) PTGS2KMT2AHSP90AA1KDM4EMEN1
SCHEMBL18133725 0.84 HSP90AA1 (0.38) PTGDR2PTGDRPTGS2KMT2AHSP90AA1
SCHEMBL2758439 0.84 ING2 (0.37) PTGDR2PTGDRPTGS2KMT2AHSP90AA1
SCHEMBL683462 0.84 KMO (0.38) PTGS2KMT2AHSP90AA1KDM4EMEN1
SCHEMBL2758391 0.84 HSP90AA1 (0.38) PTGDR2PTGDRPTGS2KMT2AHSP90AA1
SCHEMBL2758385 0.84 KMO (0.38) PTGS2KMT2AHSP90AA1KDM4EMEN1
SCHEMBL2758420 0.82 NR1I2 (0.42) PTGDR2PTGS2KDM4EMAPT
SCHEMBL21784220 0.82 PTGDR2 (0.42) PTGDR2PTGDRKMT2AHSP90AA1KDM4E
SCHEMBL2317192 0.82 KMO (0.37) PTGS2KMT2AHSP90AA1KDM4EMEN1
SCHEMBL18031578 0.81 ESR1 (0.37) PTGDR2PTGDRPTGS2KMT2AHSP90AA1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 US disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 US disclosed
US-8956802-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-02-17 US disclosed
US-8859192-B2 Negative pattern forming method and resist pattern FUJIFILM CORPORATION (JP) 2014-10-14 US disclosed
US-8808965-B2 Pattern forming method, pattern, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2014-08-19 US disclosed
US-20130266777-A1 NEGATIVE PATTERN FORMING METHOD AND RESIST PATTERN FUJIFILM CORPORATION (JP) 2013-10-10 US disclosed
US-20130202999-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-08-08 US disclosed
US-20120322007-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed