SCHEMBL14443370

SCHEMBL14443370

CC(C)OCCOc1ccccc1OC1CCCC1

nearest known ligand 0.44

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.44
KDM4E B2RXH2 1/20 0.44
PDE4A P27815 4/20 0.44
PDE4B Q07343 2/20 0.44
PDE4C Q08493 2/20 0.44
PDE4D Q08499 2/20 0.44
CARM1 Q86X55 2/20 0.39
PRMT1 Q99873 2/20 0.39
HTR1A P08908 3/20 0.39
ADRA2A P08913 2/20 0.39
ADRA2B P18089 2/20 0.39
ADRA2C P18825 2/20 0.39
NPSR1 Q6W5P4 1/20 0.38
ADRB2 P07550 2/20 0.37
ADRB1 P08588 2/20 0.37
KMT2A Q03164 1/20 0.36
HPGD P15428 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14443371 0.98 ALDH1A1 (0.43) ALDH1A1KDM4EPDE4APDE4BPDE4C
SCHEMBL682836 0.87 ALDH1A1 (0.45) ALDH1A1KDM4EPDE4APDE4BPDE4C
SCHEMBL682825 0.86 ALDH1A1 (0.44) ALDH1A1KDM4EPDE4APDE4BPDE4C
SCHEMBL14443355 0.79 HTR1D (0.57) ALDH1A1KDM4EHTR1AADRA2AADRA2B
SCHEMBL14443366 0.78 KDM4E (0.49) ALDH1A1KDM4EHPGD
SCHEMBL14443352 0.78 HTR1D (0.56) HTR1AADRA2AADRA2BADRA2CKMT2A
SCHEMBL14443369 0.77 KDM4E (0.48) ALDH1A1KDM4EHPGD
SCHEMBL5344402 0.76 MCHR1 (0.49) PDE4APDE4BPDE4CPDE4DCARM1
Ethylene SCHEMBL27549603 0.74 ALDH1A1 (0.56) ALDH1A1KDM4EPDE4APDE4BPDE4C
SCHEMBL2242864 0.74 MCHR1 (0.51) PDE4APDE4BPDE4CPDE4DCARM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed