⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL30292781 | 0.87 | — | — | |
| SCHEMBL5023056 | 0.87 | — | — | |
| SCHEMBL10614742 | 0.87 | — | — | |
| SCHEMBL5014701 | 0.87 | — | — | |
| SCHEMBL29354249 | 0.82 | — | — | |
| SCHEMBL29462554 | 0.82 | — | — | |
| SCHEMBL862074 | 0.82 | — | — | |
| SCHEMBL29464072 | 0.82 | — | — | |
| SCHEMBL10614754 | 0.78 | — | — | |
| SCHEMBL3264089 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-5755859-A | SOLUTION COMPRISING COBALT SALT PLUS TIN SALT, COMPLEXING AGENT, PHOSPHORUS-BEARING REDUCING AGENT, AND BUFFER | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1998-05-26 | — | — | US | claimed |
| CN-118234117-A | Peelable metal foil, metal-clad laminate, wiring board, and semiconductor material | 广州方邦电子股份有限公司 | 2024-06-21 | — | — | CN | disclosed |
| US-10892253-B2 | Semiconductor device manufacturing method and semiconductor device | FUJI ELECTRIC CO., LTD. (JP) | 2021-01-12 | — | — | US | disclosed |
| US-10212814-B2 | Copper foil provided with carrier foil, manufacturing method of the copper foil provided with carrier foil, and copper clad laminate for laser drilling manufactured by using the copper foil provided with carrier foil | MITSUI MINING & SMELTING CO., LTD. (JP) | 2019-02-19 | — | — | US | disclosed |
| US-20180366449-A1 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE | FUJI ELECTRIC CO., LTD. (JP) | 2018-12-20 | — | — | US | disclosed |
| CN-104160068-B | Copper foil having carrier foil, manufacturing method for producing the copper foil having carrier foil, and copper clad laminate for laser opening processing using the copper foil having carrier foil | 三井金属矿业株式会社 | 2017-05-24 | — | — | CN | disclosed |
| US-9589926-B2 | Method of manufacturing semiconductor device | FUJI ELECTRIC CO., LTD. (JP) | 2017-03-07 | — | — | US | disclosed |
| US-20160181224-A1 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE | FUJI ELECTRIC CO., LTD. (JP) | 2016-06-23 | — | — | US | disclosed |
| US-8993166-B2 | Anode active material and battery | SONY CORPORATION (JP) | 2015-03-31 | — | — | US | disclosed |
| US-20150044492-A1 | COPPER FOIL PROVIDED WITH CARRIER FOIL, MANUFACTURING METHOD OF THE COPPER FOIL PROVIDED WITH CARRIER FOIL, AND COPPER CLAD LAMINATE FOR LASER DRILLING MANUFACTURED BY USING THE COPPER FOIL PROVIDED WITH CARRIER FOIL | MITSUI MINING & SMELTING CO., LTD. (JP) | 2015-02-12 | — | — | US | disclosed |
| US-20090029544-A1 | ADHESION AND MINIMIZING OXIDATION ON ELECTROLESS CO ALLOY FILMS FOR INTEGRATION WITH LOW K INTER-METAL DIELECTRIC AND ETCH STOP | APPLIED MATERIALS, INC. | 2009-01-29 | — | — | US | disclosed |
| US-20080193856-A1 | Tin, cobalt, carbon, and phosphorus; high capacity, superior cycle characteristics, superior initial charge and discharge efficiency | SONY CORPORATION (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20070099417-A1 | Adhesion and minimizing oxidation on electroless CO alloy films for integration with low K inter-metal dielectric and etch stop | APPLIED MATERIALS, INC. | 2007-05-03 | — | — | US | disclosed |
| US-20070095367-A1 | Apparatus and method for atomic layer cleaning and polishing | WANG YAXIN | 2007-05-03 | — | — | US | disclosed |
| US-7205233-B2 | Method for forming CoWRe alloys by electroless deposition | APPLIED MATERIALS, INC. (US) | 2007-04-17 | — | — | US | disclosed |
| CN-1918325-A | Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber | APPLIED MATERIALS INC (US) | 2007-02-21 | — | — | CN | disclosed |
| US-20050181226-A1 | Method and apparatus for selectively changing thin film composition during electroless deposition in a single chamber | APPLIED MATERIALS, INC. | 2005-08-18 | — | — | US | disclosed |
| WO-2005073429-A2 | METHOD AND APPARATUS FOR SELECTIVELY CHANGING THIN FILM COMPOSITION DURING ELECTROLESS DEPOSITION IN A SINGLE CHAMBER | APPLIED MATERIALS, INC. (US) | 2005-08-11 | — | — | WO | disclosed |
| US-20050101130-A1 | Method and tool of chemical doping CoW alloys with Re for increasing barrier properties of electroless capping layers for IC Cu interconnects | APPLIED MATERIALS, INC. | 2005-05-12 | — | — | US | disclosed |
| US-5614003-A | HARDNESS, PHOSPHORUS, NICKEL AND COBALT, COPPER, MOLYBDENUM, TIN OR TUNGSTEN | MALLORY JR GLENN O (US) | 1997-03-25 | — | — | US | disclosed |