⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3266422 | 0.87 | — | — | |
| SCHEMBL306463 | 0.87 | — | — | |
| SCHEMBL305668 | 0.87 | — | — | |
| SCHEMBL29354940 | 0.82 | — | — | |
| SCHEMBL2143588 | 0.82 | — | — | |
| SCHEMBL862074 | 0.82 | — | — | |
| SCHEMBL175666 | 0.82 | — | — | |
| SCHEMBL5015927 | 0.78 | — | — | |
| SCHEMBL5014349 | 0.78 | — | — | |
| SCHEMBL8640869 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 55 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8404097-B2 | Electroplating metal aircraft object as a cathodic element into a plating bath; aqueous solution of cobalt ions, chloride ions, phosphate ions, phosphite ions and boron ions; acidic pH about one; does not produce hexavalent chromium fumes | THE BOEING COMPANY (US) | 2013-03-26 | — | — | US | claimed |
| US-20070084731-A1 | PROCESS FOR PLATING A METAL OBJECT WITH A WEAR-RESISTANT COATING AND METHOD OF COATING | THE BOEING COMPANY | 2007-04-19 | — | — | US | claimed |
| US-6958547-B2 | Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs | INTEL CORPORATION (US) | 2005-10-25 | — | — | US | claimed |
| US-20050170201-A1 | Cobalt-phosphorous-boron coating and process for plating | THE BOEING COMPANY (US) | 2005-08-04 | — | — | US | claimed |
| US-6905622-B2 | Electroless deposition method | APPLIED MATERIALS, INC. (US) | 2005-06-14 | — | — | US | claimed |
| WO-2024111195-A1 | IMAGING DEVICE AND METHOD FOR MANUFACTURING IMAGING DEVICE | パナソニックＩＰマネジメント株式会社 | 2024-05-30 | — | — | WO | disclosed |
| US-11990497-B2 | Solid-state imaging element and electronic device | SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) | 2024-05-21 | — | — | US | disclosed |
| US-20240145517-A1 | SOLID-STATE IMAGE CAPTURING ELEMENT, SOLID-STATE IMAGE CAPTURING DEVICE, AND SOLID-STATE IMAGE CAPTURING ELEMENT READING METHOD | Sony Group Corporation (JP) | 2024-05-02 | — | — | US | disclosed |
| US-11888012-B2 | Solid-state image capturing element, solid-state image capturing device, and solid-state image capturing element reading method | SONY CORPORATION (JP) | 2024-01-30 | — | — | US | disclosed |
| US-20230053000-A1 | SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE | SONY SEMICONDUCTOR SOLUTIONS CORPORATION (JP) | 2023-02-16 | — | — | US | disclosed |
| CN-114846609-A | Solid-state imaging element and electronic device | 索尼半导体解决方案公司 | 2022-08-02 | — | — | CN | disclosed |
| US-20210313381-A1 | SOLID-STATE IMAGE CAPTURING ELEMENT, SOLID-STATE IMAGE CAPTURING DEVICE, AND SOLID-STATE IMAGE CAPTURING ELEMENT READING METHOD | SONY CORPORATION (JP) | 2021-10-07 | — | — | US | disclosed |
| US-20040099908-A1 | Cladded conductor for use in a magnetoelectronics device and method for fabricating the same | FREESCALE SEMICONDUCTOR, INC. | 2004-05-27 | — | — | US | disclosed |
| US-6696758-B2 | Interconnect structures and a method of electroless introduction of interconnect structures | INTEL CORPORATION | 2004-02-24 | — | — | US | disclosed |
| US-6682989-B1 | Plating a conductive material on a dielectric material | INTEL CORPORATION | 2004-01-27 | — | — | US | disclosed |
| WO-2003094209-A2 | USE OF CONDUCTIVE ELECTROLESSLY DEPOSIDED ETCH STOP LAYERS, LINER LAYERS AND VIA PLUGS IN INTERCONNECT STRUCTURES | INTEL CORPORATION (US) | 2003-11-13 | — | — | WO | disclosed |
| US-20030207561-A1 | Interconnect structures containing conductive electrolessly deposited etch stop layers, liner layers, and via plugs | DUBIN VALERY M (US) | 2003-11-06 | — | — | US | disclosed |
| US-20030207560-A1 | Use of conductive electrolessly deposited etch stop layers, liner layers and via plugs in interconnect structures | INTEL CORPORATION | 2003-11-06 | — | — | US | disclosed |
| US-20030071355-A1 | Interconnect structures and a method of electroless introduction of interconnect structures | DUBIN VALERY M (US) | 2003-04-17 | — | — | US | disclosed |
| US-20020084529-A1 | Interconnect structures and a method of electroless introduction of interconnect structures | INTEL CORPORATION | 2002-07-04 | — | — | US | disclosed |