Predicted protein targets (top 5)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CA1 | P00915 | 2/20 | 0.33 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.31 |
| ▸ | TSHR | P16473 | 1/20 | 0.31 |
| ▸ | CA9 | Q16790 | 1/20 | 0.31 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1449707 | 0.85 | CA1 (0.43) | CA1CA9 | |
| SCHEMBL35636 | 0.82 | — | — | |
| Hydrogen Peroxide SCHEMBL21406638 | 0.73 | — | — | |
| Lithium Ion SCHEMBL27468623 | 0.70 | — | — | |
| Lithium Ion SCHEMBL180714 | 0.65 | — | — | |
| Dimethylformamide SCHEMBL27327299 | 0.62 | — | — | |
| SCHEMBL3298151 | 0.61 | — | — | |
| SCHEMBL27408056 | 0.61 | — | — | |
| Ethane SCHEMBL29463412 | 0.59 | — | — | |
| Lithium Ion SCHEMBL27935013 | 0.59 | CA1 (0.67) | CA1ALDH1A1TSHRCA9TDP1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 44 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| JP-4658963-B2 | — | — | 2011-03-23 | — | — | JP | claimed |
| JP-2007520056-A | — | — | 2007-07-19 | — | — | JP | claimed |
| WO-2006138131-A1 | METHOD FOR SILICON NITRIDE CHEMICAL VAPOR DEPOSITION | APPLIED MATERIALS, INC. (US) | 2006-12-28 | — | — | WO | claimed |
| EP-1713952-A2 | A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER | Applied Materials, Inc. (US) | 2006-10-25 | — | — | EP | claimed |
| JP-2006511087-A | — | — | 2006-03-30 | — | — | JP | claimed |
| US-20050255714-A1 | Method for silicon nitride chemical vapor deposition | APPLIED MATERIALS, INC. | 2005-11-17 | — | — | US | claimed |
| EP-1584100-A2 | A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER | Applied Materials, Inc. (US) | 2005-10-12 | — | — | EP | claimed |
| WO-2005066386-A2 | A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER | APPLIED MATERIALS, INC. (US) | 2005-07-21 | — | — | WO | claimed |
| US-20040194706-A1 | Method and apparatus for forming a high quality low temperature silicon nitride layer | APPLIED MATERIALS, INC. | 2004-10-07 | — | — | US | claimed |
| WO-2004057653-A2 | A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER | APPLIED MATERIALS, INC. (US) | 2004-07-08 | — | — | WO | claimed |
| US-8927400-B2 | Safe handling of low energy, high dose arsenic, phosphorus, and boron implanted wafers | APPLIED MATERIALS, INC. (US) | 2015-01-06 | — | — | US | disclosed |
| US-20140248759-A1 | SAFE HANDLING OF LOW ENERGY, HIGH DOSE ARSENIC, PHOSPHORUS, AND BORON IMPLANTED WAFERS | APPLIED MATERIALS, INC. (US) | 2014-09-04 | — | — | US | disclosed |
| US-8387557-B2 | Method for forming silicon-containing materials during a photoexcitation deposition process | APPLIED MATERIALS (US) | 2013-03-05 | — | — | US | disclosed |
| US-8043907-B2 | Atomic layer deposition processes for non-volatile memory devices | APPLIED MATERIALS, INC. (US) | 2011-10-25 | — | — | US | disclosed |
| US-7972663-B2 | Method and apparatus for forming a high quality low temperature silicon nitride layer | APPLIED MATERIALS, INC. (US) | 2011-07-05 | — | — | US | disclosed |
| US-20050255714-A1 | Method for silicon nitride chemical vapor deposition | APPLIED MATERIALS, INC. | 2005-11-17 | — | — | US | disclosed |
| EP-1584100-A2 | A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER | Applied Materials, Inc. (US) | 2005-10-12 | — | — | EP | disclosed |
| WO-2005066386-A2 | A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER | APPLIED MATERIALS, INC. (US) | 2005-07-21 | — | — | WO | disclosed |
| US-20040194706-A1 | Method and apparatus for forming a high quality low temperature silicon nitride layer | APPLIED MATERIALS, INC. | 2004-10-07 | — | — | US | disclosed |
| WO-2004057653-A2 | A METHOD AND APPARATUS FOR FORMING A HIGH QUALITY LOW TEMPERATURE SILICON NITRIDE LAYER | APPLIED MATERIALS, INC. (US) | 2004-07-08 | — | — | WO | disclosed |