SCHEMBL14624153

SCHEMBL14624153

CC(C)[C@H](C)OC1CCCC1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9880578 1.00
SCHEMBL3412210 1.00
SCHEMBL14771575 0.97 ACHE (0.31)
SCHEMBL3408288 0.97 ACHE (0.31)
SCHEMBL9807078 0.97 ACHE (0.31)
Ethylene Glycol SCHEMBL27888478 0.89
Propylene Glycol SCHEMBL28800751 0.85 TDP1 (0.40)
Ethylene Glycol SCHEMBL27905316 0.84
Di(Hydroxyethyl)Ether SCHEMBL27905372 0.82 TSHR (0.38)
SCHEMBL18826659 0.80

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 43 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11333974-B2 Onium salt, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-05-17 US disclosed
US-11215926-B2 Sulfonium compound, resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2022-01-04 US disclosed
US-11022881-B2 Photoacid generator, chemically amplified resist composition, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2021-06-01 US disclosed
US-20200133122-A1 NOVEL ONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2020-04-30 US disclosed
US-20190324367-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-10-24 US disclosed
US-10173975-B2 Sulfonium compound, resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2019-01-08 US disclosed
US-20180099928-A1 SULFONIUM COMPOUND, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-04-12 US disclosed
US-9921479-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-20 US disclosed
US-20170329227-A1 NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-16 US disclosed
US-20170329227-A1 NOVEL SULFONIUM COMPOUND, MAKING METHOD, RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-11-16 US disclosed
US-20150301449-A1 PHOTOACID GENERATOR, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-22 US disclosed
US-9164384-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 US disclosed
US-9164384-B2 Patterning process and resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-10-20 US disclosed
US-20150086926-A1 SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-03-26 US disclosed
US-20140322650-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-30 US disclosed
US-20140322650-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-10-30 US disclosed
US-20130130177-A1 NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-23 US disclosed
US-20130130177-A1 NEGATIVE PATTERN FORMING PROCESS AND NEGATIVE RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-05-23 US disclosed
US-20130065183-A1 PATTERNING PROCESS AND RESIST COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-14 US disclosed
WO-2007001406-A2 ARYL-CONTAINING MACROCYCLIC COMPOUNDS CHIRON CORPORATION (US) 2007-01-04 WO disclosed