SCHEMBL14649721

SCHEMBL14649721

CCC(C)(C)C(=O)OCCCCC(C)(F)F

nearest known ligand 0.42

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
▸ CYP4F2 P78329 3/20 0.42
▸ CYP4A11 Q02928 3/20 0.42
▸ CES2 O00748 2/20 0.33
▸ NAAA Q02083 1/20 0.32
▸ THRB P10828 1/20 0.32
▸ PKM P14618 1/20 0.32
▸ ALDH1A1 P00352 1/20 0.31
▸ HTT P42858 1/20 0.31
▸ FKBP1A P62942 1/20 0.31
▸ LPAR1 Q92633 1/20 0.31
▸ LPAR3 Q9UBY5 1/20 0.31
▸ EPHX1 P07099 1/20 0.31
▸ TSHR P16473 2/20 0.30
▸ ACHE P22303 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15275117 0.88 CYP4F2 (0.45) CYP4F2CYP4A11CES2NAAAHTT
SCHEMBL15432458 0.87 CYP4F2 (0.38) CYP4F2CYP4A11
SCHEMBL13667082 0.87 CYP4F2 (0.42) CYP4F2CYP4A11NAAAALDH1A1FKBP1A
SCHEMBL25667373 0.85 CYP4F2 (0.37) CYP4F2CYP4A11CES2NAAAALDH1A1
SCHEMBL13667073 0.85 CYP4F2 (0.46) CYP4F2CYP4A11NAAAALDH1A1EPHX1
SCHEMBL25784398 0.83 CYP4F2 (0.38) CYP4F2CYP4A11
SCHEMBL10189201 0.83 CYP4F2 (0.35) CYP4F2CYP4A11NAAA
SCHEMBL16214004 0.83 CYP4F2 (0.38) CYP4F2CYP4A11CES2NAAATHRB
SCHEMBL17552832 0.82 CYP4F2 (0.41) CYP4F2CYP4A11CES2NAAAHTT
SCHEMBL2754863 0.82 CYP4F2 (0.46) CYP4F2CYP4A11NAAATHRBPKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9778567-B2 Resist composition, method of forming resist pattern, polymeric compound, compound TOKYO OHKA KOGYO CO., LTD. (JP) 2017-10-03 — — US disclosed
US-9411227-B2 Resist composition, method of forming resist pattern, compound, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2016-08-09 — — US disclosed
US-9354515-B2 Resist composition, acid generator, polymeric compound and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-05-31 — — US disclosed
US-20150198881-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2015-07-16 — — US disclosed
US-9057948-B2 Resist composition for EUV or EB, and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-16 — — US disclosed
US-20150140497-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND, COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2015-05-21 — — US disclosed
US-8956801-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2015-02-17 — — US disclosed
US-20150037734-A1 RESIST COMPOSITION, ACID GENERATOR, POLYMERIC COMPOUND AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2015-02-05 — — US disclosed
US-8883396-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2014-11-11 — — US disclosed
US-8795948-B2 Resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-08-05 — — US disclosed
US-8778595-B2 Resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-15 — — US disclosed
US-20130252180-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-09-26 — — US disclosed
US-20130224656-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-08-29 — — US disclosed
US-20130157201-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 — — US disclosed
US-20130143159-A1 RESIST COMPOSITION FOR EUV OR EB, AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-06 — — US disclosed
US-20130137048-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-30 — — US disclosed
US-20130071789-A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-03-21 — — US disclosed
US-20130022911-A1 POLYMER, RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN TOKYO OHKA KOGYO CO., LTD. (JP) 2013-01-24 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20150198881-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, COMPOUND, AND POLYMERIC COMPOUND C9, SLC11A2, AR CYP4F2 1573/4885CYP4A11 146/4885CES2 2037/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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