SCHEMBL2754863

SCHEMBL2754863

CCC(C)(C)C(=O)OCCCCCC(C)(C)O

nearest known ligand 0.46

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
▸ CYP4F2 P78329 3/20 0.46
▸ CYP4A11 Q02928 3/20 0.46
▸ NAAA Q02083 1/20 0.36
▸ EPHX1 P07099 1/20 0.34
▸ HTT P42858 1/20 0.34
▸ ACHE P22303 6/20 0.33
▸ TSHR P16473 2/20 0.33
▸ MEN1 O00255 1/20 0.32
▸ MAPT P10636 1/20 0.32
▸ KMT2A Q03164 1/20 0.32
▸ ATM Q13315 1/20 0.32
▸ L3MBTL1 Q9Y468 1/20 0.32
▸ THRB P10828 1/20 0.32
▸ PKM P14618 1/20 0.32
▸ HCAR2 Q8TDS4 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15113939 0.93 CYP4F2 (0.41) CYP4F2CYP4A11NAAAATMTHRB
SCHEMBL13667073 0.89 CYP4F2 (0.46) CYP4F2CYP4A11NAAAEPHX1ACHE
SCHEMBL13667082 0.87 CYP4F2 (0.42) CYP4F2CYP4A11NAAAEPHX1ACHE
SCHEMBL15275117 0.84 CYP4F2 (0.45) CYP4F2CYP4A11NAAAEPHX1HTT
SCHEMBL2681108 0.83 NAAA (0.53) NAAAEPHX1ACHETSHRHCAR2
SCHEMBL10349281 0.83 NAAA (0.53) NAAAEPHX1ACHETSHRHCAR2
SCHEMBL2680512 0.83 NAAA (0.53) NAAAEPHX1ACHETSHRHCAR2
SCHEMBL12858360 0.83 NAAA (0.53) NAAAEPHX1ACHETSHRHCAR2
SCHEMBL17151524 0.83 NAAA (0.53) NAAAEPHX1ACHETSHRHCAR2
SCHEMBL10141466 0.83 NAAA (0.53) NAAAEPHX1ACHETSHRHCAR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9897922-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2018-02-20 — — US disclosed
US-20170102618-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2017-04-13 — — US disclosed
US-20160349620-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2016-12-01 — — US disclosed
US-9482958-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2016-11-01 — — US disclosed
US-9223219-B2 Pattern forming method, actinic ray-sensitive or radiation-sensitive resin composition and resist film FUJIFILM CORPORATION (JP) 2015-12-29 — — US disclosed
US-20150293454-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2015-10-15 — — US disclosed
US-9097973-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2015-08-04 — — US disclosed
US-8999621-B2 Pattern forming method, chemical amplification resist composition and resist film FUJIFILM CORPORATION (JP) 2015-04-07 — — US disclosed
US-8871642-B2 Method of forming pattern and developer for use in the method FUJIFILM CORPORATION (JP) 2014-10-28 — — US disclosed
US-20140242359-A1 METHOD OF FORMING PATTERN AND COMPOSITION FOR CROSSLINKED LAYER FORMATION TO BE USED IN THE METHOD FUJIFILM CORPORATION (JP) 2014-08-28 — — US disclosed
US-20140127629-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2014-05-08 — — US disclosed
US-20130113082-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2013-05-09 — — US disclosed
US-20130101812-A1 METHOD OF FORMING PATTERN FUJIFILM CORPORATION (JP) 2013-04-25 — — US disclosed
US-20130045365-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2013-02-21 — — US disclosed
US-20120322007-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-12-20 — — US disclosed
US-20120288691-A1 PATTERN FORMING METHOD, PATTERN, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-15 — — US disclosed
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-11-08 — — US disclosed
US-20120148957-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-06-14 — — US disclosed
US-20120028196-A1 METHOD OF FORMING PATTERN AND ORGANIC PROCESSING LIQUID FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-02-02 — — US disclosed
US-20120003591-A1 METHOD OF FORMING PATTERN AND DEVELOPER FOR USE IN THE METHOD FUJIFILM CORPORATION (JP) 2012-01-05 — — US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20120282548-A1 PATTERN FORMING METHOD, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND RESIST FILM RAD51, RER1, RXRA CYP4F2 3837/4885CYP4A11 4374/4885NAAA 1768/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.

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