⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1470659 | 1.00 | — | — | |
| SCHEMBL1472201 | 0.84 | — | — | |
| SCHEMBL1470703 | 0.84 | — | — | |
| SCHEMBL1472193 | 0.83 | — | — | |
| SCHEMBL1470759 | 0.83 | — | — | |
| SCHEMBL1470020 | 0.78 | — | — | |
| SCHEMBL1470753 | 0.78 | — | — | |
| SCHEMBL1470663 | 0.77 | — | — | |
| SCHEMBL1470664 | 0.77 | — | — | |
| SCHEMBL1470715 | 0.77 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 31 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3410468-B1 | N-TYPE SEMICONDUCTOR ELEMENT, COMPLEMENTARY TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND WIRELESS COMMUNICATION DEVICE IN WHICH THE SAME IS USED | TORAY INDUSTRIES (JP) | 2024-07-10 | — | — | EP | disclosed |
| EP-3382751-B1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | TORAY INDUSTRIES (JP) | 2023-09-13 | — | — | EP | disclosed |
| EP-3514822-B1 | METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES (JP) | 2023-04-26 | — | — | EP | disclosed |
| US-11616453-B2 | Integrated circuit, method for manufacturing same, and radio communication device using same | TORAY INDUSTRIES, INC. (JP) | 2023-03-28 | — | — | US | disclosed |
| EP-3706166-B1 | INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING SAME, AND RADIO COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES (JP) | 2023-02-08 | — | — | EP | disclosed |
| US-11094899-B2 | Method for manufacturing field effect transistor and method for manufacturing wireless communication device | TORAY INDUSTRIES, INC. | 2021-08-17 | — | — | US | disclosed |
| EP-3367402-B1 | CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES (JP) | 2021-07-07 | — | — | EP | disclosed |
| EP-3706166-A1 | INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING SAME, AND RADIO COMMUNICATION DEVICE USING SAME | Toray Industries, Inc. (JP) | 2020-09-09 | — | — | EP | disclosed |
| US-20200244182-A1 | INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING SAME, AND RADIO COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES, INC. (JP) | 2020-07-30 | — | — | US | disclosed |
| US-10636866-B2 | Capacitor, method for manufacturing same, and wireless communication device using same | TORAY INDUSTRIES, INC. (JP) | 2020-04-28 | — | — | US | disclosed |
| US-20180327530-A1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | TORAY INDUSTRIES, INC. (JP) | 2018-11-15 | — | — | US | disclosed |
| EP-3382751-A1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | Toray Industries, Inc. (JP) | 2018-10-03 | — | — | EP | disclosed |
| US-20180277619-A1 | CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES, INC. (JP) | 2018-09-27 | — | — | US | disclosed |
| EP-3367402-A1 | CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME | Toray Industries, Inc. (JP) | 2018-08-29 | — | — | EP | disclosed |
| US-20180026197-A1 | RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES, INC. (JP) | 2018-01-25 | — | — | US | disclosed |
| US-20160035457-A1 | FIELD EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2016-02-04 | — | — | US | disclosed |
| EP-2975649-A1 | FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2016-01-20 | — | — | EP | disclosed |
| US-9048445-B2 | Gate insulating material, gate insulating film and organic field-effect transistor | TORAY INDUSTRIES, INC. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20110068417-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2011-03-24 | — | — | US | disclosed |
| EP-2259289-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2010-12-08 | — | — | EP | disclosed |