SCHEMBL1470693

SCHEMBL1470693

CCO[Si](C)(OCC)C(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)C(F)C(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1470017 0.98
SCHEMBL2208581 0.90
SCHEMBL207819 0.85
SCHEMBL5145776 0.83
SCHEMBL28448445 0.83
SCHEMBL232074 0.83
SCHEMBL1472195 0.82
SCHEMBL1470743 0.81
SCHEMBL1470762 0.81
Alcohol SCHEMBL28850434 0.81

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119371666-A Method for producing solvent-free silicone composition 阪田油墨株式会社 2025-01-28 CN disclosed
CN-119371667-A Solvent-free silicone composition and method for producing silicone compound 阪田油墨株式会社 2025-01-28 CN disclosed
CN-115491904-A Durable antibacterial garment 福建省尚飞制衣有限公司 2022-12-20 CN disclosed
US-10790461-B2 Field-effect transistor, method for manufacturing the same, and wireless communication device and goods tag including the same TORAY INDUSTRIES, INC. (JP) 2020-09-29 US disclosed
EP-3547383-B1 FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, WIRELESS COMMUNICATION DEVICE USING SAME AND ARTICLE TAG TORAY INDUSTRIES (JP) 2020-06-24 EP disclosed
US-10490748-B2 Rectifying element, method for producing same, and wireless communication device TORAY INDUSTRIES, INC. (JP) 2019-11-26 US disclosed
EP-3547383-A1 FIELD EFFECT TRANSISTOR, METHOD FOR PRODUCING SAME, WIRELESS COMMUNICATION DEVICE USING SAME AND ARTICLE TAG Toray Industries, Inc. (JP) 2019-10-02 EP disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 US disclosed
US-20160035457-A1 FIELD EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2016-02-04 US disclosed
EP-2975649-A1 FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2016-01-20 EP disclosed
EP-2259289-A1 GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2010-12-08 EP disclosed
US-7837459-B2 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-11-23 US disclosed
US-20090023083-A1 fabrication of dual damascene structures using imprint lithographic techniques; fabrication of dual damascene relief structures in imprint lithography molds GLOBALFOUNDRIES U.S. INC. 2009-01-22 US disclosed
US-20080305197-A1 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning GLOBALFOUNDRIES U.S. INC. 2008-12-11 US disclosed
US-20080303160-A1 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning GLOBALFOUNDRIES U.S. INC. 2008-12-11 US disclosed
US-7435074-B2 Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-10-14 US disclosed
US-20050202350-A1 Multilevel mold; used for the interconnect architecture of semiconductor chips GLOBALFOUNDRIES U.S. INC. 2005-09-15 US disclosed
US-6852368-B2 Hard coating composition and resin product with hard coat NIPPON ARC CO., LTD. (JP) 2005-02-08 US disclosed
US-20030194571-A1 Hard coating composition and resin product with hard coat NIPPON ARC CO., LTD. (JP) 2003-10-16 US disclosed
EP-1298177-A1 HARD COATING COMPOSITION AND RESIN PRODUCT WITH HARD COAT NIPPON ARC CO., LTD. (JP) 2003-04-02 EP disclosed