SCHEMBL2208581

SCHEMBL2208581

CCO[Si](C)(OCC)C(F)C(F)(F)C(F)(F)C(F)C(F)C(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1470693 0.90
SCHEMBL1470017 0.88
SCHEMBL157272 0.84
SCHEMBL29264647 0.79
SCHEMBL3741756 0.77
SCHEMBL740764 0.77
SCHEMBL207819 0.74
SCHEMBL232074 0.72
SCHEMBL28448445 0.72
SCHEMBL5145776 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 10 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116130188-B AC lightning arrester 醴陵市东方电瓷电器有限公司 2024-12-31 CN disclosed
CN-116130188-A AC lightning arrester 醴陵市东方电瓷电器有限公司 2023-05-16 CN disclosed
US-7982312-B2 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-07-19 US disclosed
US-7862989-B2 fabrication of dual damascene structures using imprint lithographic techniques; fabrication of dual damascene relief structures in imprint lithography molds INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2011-01-04 US disclosed
US-7837459-B2 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-11-23 US disclosed
US-20090023083-A1 fabrication of dual damascene structures using imprint lithographic techniques; fabrication of dual damascene relief structures in imprint lithography molds GLOBALFOUNDRIES U.S. INC. 2009-01-22 US disclosed
US-20080303160-A1 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning GLOBALFOUNDRIES U.S. INC. 2008-12-11 US disclosed
US-20080305197-A1 Method for fabricating dual damascene structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascene patterning GLOBALFOUNDRIES U.S. INC. 2008-12-11 US disclosed
US-7435074-B2 Method for fabricating dual damascence structures using photo-imprint lithography, methods for fabricating imprint lithography molds for dual damascene structures, materials for imprintable dielectrics and equipment for photo-imprint lithography used in dual damascence patterning INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2008-10-14 US disclosed
US-20050202350-A1 Multilevel mold; used for the interconnect architecture of semiconductor chips GLOBALFOUNDRIES U.S. INC. 2005-09-15 US disclosed