⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1470034 | 0.78 | — | — | |
| SCHEMBL1470071 | 0.74 | — | — | |
| SCHEMBL28517338 | 0.73 | — | — | |
| SCHEMBL3447469 | 0.70 | TSHR (0.30) | — | |
| SCHEMBL4275376 | 0.69 | — | — | |
| SCHEMBL1470064 | 0.68 | — | — | |
| SCHEMBL28890763 | 0.67 | — | — | |
| SCHEMBL4084508 | 0.67 | MAPK1 (0.35) | — | |
| SCHEMBL4081235 | 0.67 | — | — | |
| SCHEMBL4077646 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 34 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-3410468-B1 | N-TYPE SEMICONDUCTOR ELEMENT, COMPLEMENTARY TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND WIRELESS COMMUNICATION DEVICE IN WHICH THE SAME IS USED | TORAY INDUSTRIES (JP) | 2024-07-10 | — | — | EP | disclosed |
| EP-3382751-B1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | TORAY INDUSTRIES (JP) | 2023-09-13 | — | — | EP | disclosed |
| EP-3514822-B1 | METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES (JP) | 2023-04-26 | — | — | EP | disclosed |
| US-11616453-B2 | Integrated circuit, method for manufacturing same, and radio communication device using same | TORAY INDUSTRIES, INC. (JP) | 2023-03-28 | — | — | US | disclosed |
| EP-3706166-B1 | INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING SAME, AND RADIO COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES (JP) | 2023-02-08 | — | — | EP | disclosed |
| US-11094899-B2 | Method for manufacturing field effect transistor and method for manufacturing wireless communication device | TORAY INDUSTRIES, INC. | 2021-08-17 | — | — | US | disclosed |
| EP-3367402-B1 | CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES (JP) | 2021-07-07 | — | — | EP | disclosed |
| CN-112368611-A | Resin composition, light-shielding film, method for producing light-shielding film, and substrate with partition | 东丽株式会社 | 2021-02-12 | — | — | CN | disclosed |
| CN-112368336-A | Resin composition and cured film thereof | 东丽株式会社 | 2021-02-12 | — | — | CN | disclosed |
| CN-111771163-A | Negative photosensitive coloring composition, cured film, and touch panel using same | 东丽株式会社 | 2020-10-13 | — | — | CN | disclosed |
| US-20180327530-A1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | TORAY INDUSTRIES, INC. (JP) | 2018-11-15 | — | — | US | disclosed |
| EP-3382751-A1 | FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT | Toray Industries, Inc. (JP) | 2018-10-03 | — | — | EP | disclosed |
| US-20180277619-A1 | CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME | TORAY INDUSTRIES, INC. (JP) | 2018-09-27 | — | — | US | disclosed |
| EP-3367402-A1 | CAPACITOR, METHOD FOR MANUFACTURING SAME, AND WIRELESS COMMUNICATION DEVICE USING SAME | Toray Industries, Inc. (JP) | 2018-08-29 | — | — | EP | disclosed |
| US-20180026197-A1 | RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE | TORAY INDUSTRIES, INC. (JP) | 2018-01-25 | — | — | US | disclosed |
| US-20160035457-A1 | FIELD EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2016-02-04 | — | — | US | disclosed |
| EP-2975649-A1 | FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2016-01-20 | — | — | EP | disclosed |
| US-9048445-B2 | Gate insulating material, gate insulating film and organic field-effect transistor | TORAY INDUSTRIES, INC. (JP) | 2015-06-02 | — | — | US | disclosed |
| US-20110068417-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR | TORAY INDUSTRIES, INC. (JP) | 2011-03-24 | — | — | US | disclosed |
| EP-2259289-A1 | GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR | Toray Industries, Inc. (JP) | 2010-12-08 | — | — | EP | disclosed |