⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29564315 | 1.00 | — | — | |
| SCHEMBL23710 | 1.00 | — | — | |
| SCHEMBL31047168 | 1.00 | — | — | |
| SCHEMBL1994989 | 1.00 | — | — | |
| SCHEMBL965774 | 1.00 | — | — | |
| SCHEMBL9276357 | 1.00 | — | — | |
| SCHEMBL9278969 | 1.00 | — | — | |
| SCHEMBL869255 | 1.00 | — | — | |
| SCHEMBL8685824 | 1.00 | — | — | |
| SCHEMBL23712 | 1.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 194 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-118136679-B | Double-gate LDMOS device based on heterojunction two-dimensional electron gas and manufacturing method | 北京智芯微电子科技有限公司 | 2024-07-09 | — | — | CN | claimed |
| CN-118136679-A | Double-gate LDMOS device based on heterojunction two-dimensional electron gas and manufacturing method | 北京智芯微电子科技有限公司 | 2024-06-04 | — | — | CN | claimed |
| CN-115966623-A | Photoelectric detector and integrated circuit | 鸿海精密工业股份有限公司 | 2023-04-14 | — | — | CN | claimed |
| US-20230114395-A1 | PHOTODETECTOR AND INTEGRATED CIRCUIT | Hon Young Semiconductor Corporation (HYS) (TW) | 2023-04-13 | — | — | US | claimed |
| US-9070771-B2 | Bulk finFET with controlled fin height and high-k liner | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-06-30 | — | — | US | claimed |
| US-20140353721-A1 | BULK FINFET WITH CONTROLLED FIN HEIGHT AND HIGH-K LINER | GLOBALFOUNDRIES U.S. INC. | 2014-12-04 | — | — | US | claimed |
| US-20140061820-A1 | BULK FINFET WITH CONTROLLED FIN HEIGHT AND HIGH-K LINER | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-03-06 | — | — | US | claimed |
| CN-101981703-A | Photodetector with valence-mending adsorbate region and a method of fabrication thereof | AGENCY SCIENCE TECH & RES | 2011-02-23 | — | — | CN | claimed |
| WO-2009102280-A1 | PHOTODETECTOR WITH VALENCE-MENDING ADSORBATE REGION AND A METHOD OF FABRICATION THEREOF | AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH (SG) | 2009-08-20 | — | — | WO | claimed |
| CN-201096959-Y | Wide-angle optical passive heat difference eliminating infrared optical lens | KUNMING INST OF PHYSICS KUNMIN (CN) | 2008-08-06 | — | — | CN | claimed |
| US-7358527-B1 | Systems and methods for testing germanium devices | LUXTERA, INC. (US) | 2008-04-15 | — | — | US | claimed |
| US-20260129955-A1 | ETCH STOP LAYER FOR REMOVAL OF SUBSTRATE IN STACKING TRANSISTORS AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-05-07 | — | — | US | disclosed |
| US-20260040607-A1 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME | NANYA TECHNOLOGY CORP (TW) | 2026-02-05 | — | — | US | disclosed |
| US-20250344495-A1 | MIXED COMPLEMENTARY FIELD EFFECT AND UNIPOLAR TRANSISTORS AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| CN-119960167-B | Scanning optical system based on rotary risley prism | 中国科学院长春光学精密机械与物理研究所 | 2025-10-17 | — | — | CN | disclosed |
| US-7119401-B2 | Tunable semiconductor diodes | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2006-10-10 | — | — | US | disclosed |
| US-20050269629-A1 | Fin field effect transistors and methods of fabricating the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-12-08 | — | — | US | disclosed |
| US-20050151223-A1 | TUNABLE SEMICONDUCTOR DIODES | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-07-14 | — | — | US | disclosed |
| US-6680504-B2 | Method for constructing a metal oxide semiconductor field effect transistor | TEXAS INSTRUMENTS INCORPORATED | 2004-01-20 | — | — | US | disclosed |
| US-20020081792-A1 | Method for constructing a metal oxide semiconductor field effect transistor | TEXAS INSTRUMENTS INCORPORATED | 2002-06-27 | — | — | US | disclosed |