⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29564315 | 1.00 | — | — | |
| SCHEMBL23710 | 1.00 | — | — | |
| SCHEMBL31047168 | 1.00 | — | — | |
| SCHEMBL1994989 | 1.00 | — | — | |
| SCHEMBL965774 | 1.00 | — | — | |
| SCHEMBL1470889 | 1.00 | — | — | |
| SCHEMBL9276357 | 1.00 | — | — | |
| SCHEMBL9278969 | 1.00 | — | — | |
| SCHEMBL8685824 | 1.00 | — | — | |
| SCHEMBL23712 | 1.00 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 821 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240219343-A1 | BACK GATE ION-SENSITIVE FIELD EFFECT TRANSISTOR SENSING WITH STACKED HIGH-K NANOSHEETS | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2024-07-04 | — | — | US | claimed |
| US-11769799-B2 | Patterned silicon substrate-silicon germanium, thin film composite structure and preparation methods and application thereof | INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES (CN) | 2023-09-26 | — | — | US | claimed |
| US-11664421-B2 | Quantum dot devices | INTEL CORPORATION (US) | 2023-05-30 | — | — | US | claimed |
| CN-115966623-A | Photoelectric detector and integrated circuit | 鸿海精密工业股份有限公司 | 2023-04-14 | — | — | CN | claimed |
| US-20230114395-A1 | PHOTODETECTOR AND INTEGRATED CIRCUIT | Hon Young Semiconductor Corporation (HYS) (TW) | 2023-04-13 | — | — | US | claimed |
| US-20220157942-A1 | PATTERNED SILICON SUBSTRATE-SILICON GERMANIUM, THIN FILM COMPOSITE STRUCTURE AND PREPARATION METHODS AND APPLICATION THEREOF | INSTITUTE OF PHYSICS, CHINESE ACADEMY OF SCIENCES (CN) | 2022-05-19 | — | — | US | claimed |
| CN-112382657-B | Graphic silicon substrate-silicon germanium film composite structure and preparation method and application thereof | 中国科学院物理研究所 | 2022-03-18 | — | — | CN | claimed |
| CN-108198858-B | Heterojunction potential control insulated gate bipolar transistor | 重庆大学 | 2021-11-09 | — | — | CN | claimed |
| CN-112820823-A | Multi-value phase change memory cell, phase change memory, electronic equipment and preparation method | 华为技术有限公司 | 2021-05-18 | — | — | CN | claimed |
| CN-112382657-A | Graphic silicon substrate-silicon germanium film composite structure and preparation method and application thereof | 中国科学院物理研究所 | 2021-02-19 | — | — | CN | claimed |
| US-6881638-B1 | Method of fabricating a bipolar junction transistor | UNITED MICROELECTRONICS CORP. (TW) | 2005-04-19 | — | — | US | claimed |
| US-20050045947-A1 | THIN CHANNEL FET WITH RECESSED SOURCE/DRAINS AND EXTENSIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2005-03-03 | — | — | US | claimed |
| CN-1417844-A | SiGe/Si Chemical vapor deposition growth process | XI AN ELECTRONIC SCIENCE & TEC (CN) | 2003-05-14 | — | — | CN | claimed |
| US-20030010652-A1 | Method of enhanced heat extraction from a geothermal heat source for the production of electricity thermoelectrically and mechanically via the high-pressure injection of a cryogen into a U-tube or open tube heat exchanger within a geothermal heat source, such as a producing or depleted oil well or gas well, or such as a geothermal water well, or such as hot dry rock; and, method of air-lift pumping water; and, method of electrolyzing the water into hydrogen and oxygen using the electricity genarated | HUNT ROBERT DANIEL (US) | 2003-01-16 | — | — | US | claimed |
| US-20020094597-A1 | Quantum dot infrared photodetector and method for fabricating the same | NATIONAL SCIENCE COUNCIL (TW) | 2002-07-18 | — | — | US | claimed |
| US-6151347-A | Laser diode and method of fabrication thereof | NORTEL NETWORKS CORPORATION (CA) | 2000-11-21 | — | — | US | claimed |
| US-5897359-A | Method of manufacturing a silicon/silicon germanium heterojunction bipolar transistor | ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (KR) | 1999-04-27 | — | — | US | claimed |
| US-5528209-A | Monolithic microwave integrated circuit and method | HUGHES AIRCRAFT COMPANY (US) | 1996-06-18 | — | — | US | claimed |
| EP-0633606-A1 | Method of manufacturing a power diode | GI CORPORATION (US) | 1995-01-11 | — | — | EP | claimed |
| EP-0228516-B1 | MODULATION-DOPED FIELD-EFFECT TRANSISTOR | Licentia Patent-Verwaltungs-GmbH (DE) | 1991-06-26 | — | — | EP | claimed |