SCHEMBL1472189

SCHEMBL1472189

CC[Si](CC(F)(F)F)(OC(C)C)OC(C)C

nearest known ligand 0.30

Predicted protein targets (top 4)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 1/20 0.30
CYP1A2 P05177 1/20 0.30
CYP2C19 P33261 1/20 0.30
KMT2A Q03164 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1470708 0.78
SCHEMBL105249 0.77
SCHEMBL28185644 0.76
SCHEMBL1470760 0.73
SCHEMBL1472185 0.73
SCHEMBL16807003 0.72 TP53 (0.31)
SCHEMBL705087 0.72
SCHEMBL706025 0.72
SCHEMBL1470062 0.71
SCHEMBL1472168 0.71

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-3410468-B1 N-TYPE SEMICONDUCTOR ELEMENT, COMPLEMENTARY TYPE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND WIRELESS COMMUNICATION DEVICE IN WHICH THE SAME IS USED TORAY INDUSTRIES (JP) 2024-07-10 EP disclosed
CN-115427514-B Resin composition, light-shielding film, and substrate with partition wall 东丽株式会社 2024-01-02 CN disclosed
EP-3382751-B1 FERROELECTRIC MEMORY ELEMENT, METHOD FOR PRODUCING SAME, MEMORY CELL USING FERROELECTRIC MEMORY ELEMENT, AND RADIO COMMUNICATION DEVICE USING FERROELECTRIC MEMORY ELEMENT TORAY INDUSTRIES (JP) 2023-09-13 EP disclosed
US-11690237-B2 Field effect-transistor, method for manufacturing same, wireless communication device using same, and product tag TORAY INDUSTRIES, INC. (JP) 2023-06-27 US disclosed
CN-111095566-B Field effect transistor, method of manufacturing the same, wireless communication device using the same, and merchandise tag 东丽株式会社 2023-05-23 CN disclosed
EP-3514822-B1 METHOD FOR MANUFACTURING FIELD EFFECT TRANSISTOR AND METHOD FOR MANUFACTURING WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES (JP) 2023-04-26 EP disclosed
US-11616453-B2 Integrated circuit, method for manufacturing same, and radio communication device using same TORAY INDUSTRIES, INC. (JP) 2023-03-28 US disclosed
EP-3706166-B1 INTEGRATED CIRCUIT, METHOD FOR MANUFACTURING SAME, AND RADIO COMMUNICATION DEVICE USING SAME TORAY INDUSTRIES (JP) 2023-02-08 EP disclosed
CN-115427514-A Resin composition, light-shielding film and substrate with partition wall 东丽株式会社 2022-12-02 CN disclosed
CN-112368611-B Resin composition, light-shielding film, method for producing light-shielding film, and substrate with partition 东丽株式会社 2022-11-22 CN disclosed
CN-108140484-A Capacitor and its manufacturing method and use its wireless communication apparatus 东丽株式会社 2018-06-08 CN disclosed
US-20180026197-A1 RECTIFYING ELEMENT, METHOD FOR PRODUCING SAME, AND WIRELESS COMMUNICATION DEVICE TORAY INDUSTRIES, INC. (JP) 2018-01-25 US disclosed
US-20160035457-A1 FIELD EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2016-02-04 US disclosed
EP-2975649-A1 FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2016-01-20 EP disclosed
CN-105190901-A Field effect transistor TORAY INDUSTRIES 2015-12-23 CN disclosed
US-9048445-B2 Gate insulating material, gate insulating film and organic field-effect transistor TORAY INDUSTRIES, INC. (JP) 2015-06-02 US disclosed
CN-102089870-B Gate insulating material, gate insulating film, and organic field effect transistor TORAY INDUSTRIES 2013-08-28 CN disclosed
CN-102089870-A Gate insulating material, gate insulating film, and organic field effect transistor TORAY INDUSTRIES 2011-06-08 CN disclosed
US-20110068417-A1 GATE INSULATING MATERIAL, GATE INSULATING FILM AND ORGANIC FIELD-EFFECT TRANSISTOR TORAY INDUSTRIES, INC. (JP) 2011-03-24 US disclosed
EP-2259289-A1 GATE INSULATING MATERIAL, GATE INSULATING FILM, AND ORGANIC FIELD EFFECT TRANSISTOR Toray Industries, Inc. (JP) 2010-12-08 EP disclosed