SCHEMBL14739829

SCHEMBL14739829

COc1c(O)ccc(C2(c3ccc(O)cc3)c3ccccc3-c3ccccc32)c1OC

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 3/20 0.47
ESR2 Q92731 3/20 0.47
MEN1 O00255 4/20 0.39
KMT2A Q03164 4/20 0.39
LMNA P02545 3/20 0.39
MAPT P10636 3/20 0.39
SMN1; SMN2 Q16637 3/20 0.39
KDM4E B2RXH2 1/20 0.39
OPRK1 P41145 1/20 0.39
PDE4D Q08499 5/20 0.38
GPR55 Q9Y2T6 3/20 0.37
TDP1 Q9NUW8 2/20 0.37
CHRM2 P08172 1/20 0.37
ADORA3 P0DMS8 1/20 0.37
KCNH2 Q12809 1/20 0.37
ALDH1A1 P00352 1/20 0.37
TP53 P04637 1/20 0.37
TYMS P04818 1/20 0.37
CYP3A4 P08684 1/20 0.37
ALOX15 P16050 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29646298 1.00 ESR1 (0.47) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL29703311 0.78 ESR1 (0.54) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL14740013 0.78 ESR1 (0.54) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL649109 0.77 PDE4D (0.53) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL20941952 0.77 ESR1 (0.45) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL29462973 0.77 PDE4D (0.53) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL28529209 0.77 ESR1 (0.57) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL5678731 0.76 MEN1 (0.50) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL900116 0.76 MEN1 (0.63) ESR1ESR2MEN1KMT2ALMNA
SCHEMBL45826 0.76 MEN1 (0.63) ESR1ESR2MEN1KMT2ALMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115963695-A Organic film forming material, pattern forming method, and compound 信越化学工业株式会社 2023-04-14 CN disclosed
US-9046764-B2 Resist underlayer film composition, method for producing polymer for resist underlayer film, and patterning process using the resist underlayer film composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-06-02 US disclosed
US-8652756-B2 Positive resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2014-02-18 US disclosed
US-20130171569-A1 RESIST UNDERLAYER FILM COMPOSITION, METHOD FOR PRODUCING POLYMER FOR RESIST UNDERLAYER FILM, AND PATTERNING PROCESS USING THE RESIST UNDERLAYER FILM COMPOSITION SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-07-04 US disclosed
US-20130056654-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2013-03-07 US disclosed