SCHEMBL14917552

SCHEMBL14917552

C=CCN([SiH3])CC=C.C=CCNCC=C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14917540 1.00
SCHEMBL14917531 1.00
SCHEMBL1079757 0.83
SCHEMBL4418989 0.78 TDP1 (0.31)
SCHEMBL22105 0.76
Methane SCHEMBL23927285 0.73
SCHEMBL9402771 0.73 TSHR (0.36)
Hydrochloric Acid SCHEMBL220991 0.73
Ammonia Solution, Strong SCHEMBL797498 0.73
SCHEMBL7851077 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 30 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230031720-A1 METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS ASM INTERNATIONAL N.V. (NL) 2023-02-02 US disclosed
US-11075083-B2 Si-passivated GE gate stack IMEC VZW (BE) 2021-07-27 US disclosed
US-20210025059-A1 PLASMA ATOMIC LAYER DEPOSITION ASM IP HOLDING B.V. (NL) 2021-01-28 US disclosed
US-20200388487-A1 METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS ASM INTERNATIONAL N.V. (NL) 2020-12-10 US disclosed
US-10822700-B2 Plasma atomic layer deposition ASM IP HOLDING B.V. (NL) 2020-11-03 US disclosed
US-10784105-B2 Methods for forming doped silicon oxide thin films ASM INTERNATIONAL N.V. (NL) 2020-09-22 US disclosed
US-20200208268-A1 PLASMA ATOMIC LAYER DEPOSITION ASM IP HOLDING B.V. (NL) 2020-07-02 US disclosed
US-20200203168-A1 Si-Passivated GE Gate Stack IMEC VZW (BE) 2020-06-25 US disclosed
EP-3671813-A1 SI-PASSIVATED GE GATE STACK IMEC vzw (BE) 2020-06-24 EP disclosed
US-20200185218-A1 METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS ASM INTERNATIONAL N.V. (NL) 2020-06-11 US disclosed
US-9564314-B2 Methods for forming doped silicon oxide thin films ASM INTERNATIONAL N.V. (NL) 2017-02-07 US disclosed
US-20160196970-A1 METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS ASM INTERNATIONAL N.V. (NL) 2016-07-07 US disclosed
US-9368352-B2 Methods for forming doped silicon oxide thin films ASM INTERNATIONAL N.V. (NL) 2016-06-14 US disclosed
US-9330899-B2 Method of depositing thin film ASM IP HOLDING B.V. (NL) 2016-05-03 US disclosed
US-9153441-B2 Methods for forming doped silicon oxide thin films ASM INTERNATIONAL, N.V. (NL) 2015-10-06 US disclosed
US-20150279681-A1 PLASMA ATOMIC LAYER DEPOSITION ASM IP HOLDING B.V. (NL) 2015-10-01 US disclosed
US-20150147875-A1 METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS ASM INTERNATIONAL N.V. (NL) 2015-05-28 US disclosed
US-20140120738-A1 METHOD OF DEPOSITING THIN FILM ASM IP HOLDING B.V. (NL) 2014-05-01 US disclosed
US-8679958-B2 Methods for forming doped silicon oxide thin films ASM INTERNATIONAL N.V. (NL) 2014-03-25 US disclosed
US-20130115763-A1 METHODS FOR FORMING DOPED SILICON OXIDE THIN FILMS ASM International. N.V. (NL) 2013-05-09 US disclosed