SCHEMBL14925607

SCHEMBL14925607

CCC(C)(C)C(=O)NC(=O)CC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.56

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 7/20 0.56
EPHX2 P34913 2/20 0.49
SMN1; SMN2 Q16637 3/20 0.48
KDM4E B2RXH2 2/20 0.47
HPGD P15428 1/20 0.47
NPSR1 Q6W5P4 1/20 0.46
P2RX7 Q99572 3/20 0.44
GLA P06280 1/20 0.43
KMT2A Q03164 1/20 0.43
EPHX1 P07099 1/20 0.43
CYP3A4 P08684 1/20 0.42
CYP2C19 P33261 1/20 0.42
LMNA P02545 1/20 0.42
L3MBTL1 Q9Y468 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17929910 0.78 ALDH1A1 (0.56) ALDH1A1EPHX2P2RX7L3MBTL1
SCHEMBL14925599 0.78 ALDH1A1 (0.53) ALDH1A1SMN1; SMN2KDM4ENPSR1P2RX7
SCHEMBL11571843 0.76 ALDH1A1 (0.67) ALDH1A1EPHX2SMN1; SMN2KDM4EHPGD
SCHEMBL3454752 0.75 ALDH1A1 (0.65) ALDH1A1EPHX2SMN1; SMN2NPSR1P2RX7
SCHEMBL14019924 0.74 ALDH1A1 (0.59) ALDH1A1EPHX2SMN1; SMN2KDM4EHPGD
SCHEMBL11941695 0.73 KMT2A (0.53) ALDH1A1EPHX2SMN1; SMN2NPSR1KMT2A
SCHEMBL16158150 0.73 ALDH1A1 (0.70) ALDH1A1EPHX2SMN1; SMN2NPSR1P2RX7
SCHEMBL23220348 0.72 ALDH1A1 (1.00) ALDH1A1EPHX2SMN1; SMN2NPSR1P2RX7
SCHEMBL1677987 0.72 ALDH1A1 (1.00) ALDH1A1EPHX2SMN1; SMN2NPSR1P2RX7
SCHEMBL22186185 0.71 KMT2A (0.60) ALDH1A1EPHX2SMN1; SMN2NPSR1P2RX7

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9341947-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2016-05-17 US disclosed
US-9274424-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2016-03-01 US disclosed
US-9235123-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2016-01-12 US disclosed
US-9133102-B2 Resist composition, method of forming resist pattern and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2015-09-15 US disclosed
US-9052592-B2 Resist composition and resist pattern forming method TOKYO OHKA KOGYO CO., LTD. (JP) 2015-06-09 US disclosed
US-20140287360-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-25 US disclosed
US-20140287362-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-25 US disclosed
US-20140287361-A1 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD TOKYO OHKA KOGYO CO., LTD. (JP) 2014-09-25 US disclosed
US-20140221673-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2014-08-07 US disclosed
US-8778595-B2 Resist composition, method of forming resist pattern, and polymeric compound TOKYO OHKA KOGYO CO., LTD. (JP) 2014-07-15 US disclosed
US-20130157201-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-06-20 US disclosed
US-20130115554-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND TOKYO OHKA KOGYO CO., LTD. (JP) 2013-05-09 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20130115554-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND C1R, SLC11A2, C9 ALDH1A1 1040/4885EPHX2 664/4885SMN1; SMN2 1512/4885
US-20140221673-A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN AND POLYMERIC COMPOUND C1R, SLC11A2, C9 ALDH1A1 1040/4885EPHX2 664/4885SMN1; SMN2 1512/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.