⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28582994 | 0.76 | — | — | |
| SCHEMBL339997 | 0.74 | — | — | |
| SCHEMBL16864904 | 0.71 | — | — | |
| SCHEMBL12458659 | 0.70 | — | — | |
| SCHEMBL11627139 | 0.67 | — | — | |
| SCHEMBL387955 | 0.67 | — | — | |
| SCHEMBL4589963 | 0.67 | — | — | |
| Methane SCHEMBL8570500 | 0.64 | — | — | |
| SCHEMBL12458655 | 0.64 | — | — | |
| SCHEMBL7060897 | 0.64 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8765887-B2 | Process and catalyst system for polydiene production | BRIDGESTONE CORPORATION (JP) | 2014-07-01 | — | — | US | claimed |
| US-8951711-B2 | Patterning process and composition for forming silicon-containing film usable therefor | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-02-10 | — | — | US | disclosed |
| US-20140342289-A1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-11-20 | — | — | US | disclosed |
| EP-2470574-B1 | PROCESS AND CATALYST SYSTEM FOR POLYDIENE PRODUCTION | BRIDGESTONE CORP (JP) | 2014-09-17 | — | — | EP | disclosed |
| US-8835102-B2 | Patterning process and composition for forming silicon-containing film usable therefor | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-09-16 | — | — | US | disclosed |
| US-8765887-B2 | Process and catalyst system for polydiene production | BRIDGESTONE CORPORATION (JP) | 2014-07-01 | — | — | US | disclosed |
| US-20120238095-A1 | PATTERNING PROCESS AND COMPOSITION FOR FORMING SILICON-CONTAINING FILM USABLE THEREFOR | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-09-20 | — | — | US | disclosed |
| EP-2470574-A2 | PROCESS AND CATALYST SYSTEM FOR POLYDIENE PRODUCTION | Bridgestone Corporation (JP) | 2012-07-04 | — | — | EP | disclosed |
| US-20120165484-A1 | PROCESS AND CATALYST SYSTEM FOR POLYDIENE PRODUCTION | BRIDGESTONE CORPORATION (JP) | 2012-06-28 | — | — | US | disclosed |
| WO-2011028523-A2 | PROCESS AND CATALYST SYSTEM FOR POLYDIENE PRODUCTION | BRIDGESTONE CORPORATION (JP) | 2011-03-10 | — | — | WO | disclosed |
| US-7884176-B2 | dispersing TS(TEOS-SiO2) or APTES/TEOS-SiO2 (TAS) in solvent so as to form TS solution or TAS solution; adding triphenylolmethane triglycidyl ether and 1,4-butanediol diglycidyl ether into the TS solution or TAS solution to produce glycidyl ether/TS solution or glycidyl ether/TAS solution, curing | CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS BUREAU, M.N.D. (TW) | 2011-02-08 | — | — | US | disclosed |
| US-20100283133-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | HAMADA YOSHITAKA | 2010-11-11 | — | — | US | disclosed |
| US-7786022-B2 | Method for forming insulating film with low dielectric constant | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-08-31 | — | — | US | disclosed |
| US-20090093611-A1 | Epoxy/modified silicon dioxide corrosion resistant nanocomposite material and preparation method thereof | NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY (TW) | 2009-04-09 | — | — | US | disclosed |
| US-20080290472-A1 | SEMICONDUCTOR INTERLAYER-INSULATING FILM FORMING COMPOSITION, PREPARATION METHOD THEREOF, FILM FORMING METHOD, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080290521-A1 | FILM-FORMING COMPOSITION, INSULATING FILM WITH LOW DIELECTRIC CONSTANT, FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |
| US-20080292863-A1 | SILOXANE POLYMER, PREPARATION METHOD THEREOF, POROUS-FILM FORMING COATING SOLUTION CONTAINING THE POLYMER, POROUS FILM, AND SEMICONDUCTOR DEVICE USING THE POROUS FILM | SHIN ETSU CHEMICAL CO., LTD. | 2008-11-27 | — | — | US | disclosed |