SCHEMBL149430

SCHEMBL149430

CC[Si](CC)(CC)NC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2269861 0.79
SCHEMBL15309856 0.75 EPHX1 (0.32)
SCHEMBL2276057 0.71
Lithium SCHEMBL29592603 0.70
SCHEMBL28645213 0.70
SCHEMBL2273963 0.69
SCHEMBL235701 0.67
SCHEMBL235324 0.67
SCHEMBL25166709 0.64
SCHEMBL2511558 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 120 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
CN-119930872-A Catalyst system, prepolymerized catalyst composition and olefin polymerization process 中国石油化工股份有限公司 2025-05-06 CN claimed
CN-119930869-A Auxiliary agent for olefin polymerization, olefin catalyst system, prepolymerized catalyst composition and olefin polymerization method 中国石油化工股份有限公司 2025-05-06 CN claimed
CN-119900018-A Composition for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2025-04-29 CN claimed
US-11649547-B2 Deposition of carbon doped silicon oxide VERSUM MATERIALS US, LLC (US) 2023-05-16 US claimed
US-20210363639-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2021-11-25 US claimed
EP-3902939-A1 DEPOSITION OF CARBON DOPED SILICON OXIDE Versum Materials US, LLC (US) 2021-11-03 EP claimed
CN-113383108-A Deposition of carbon-doped silicon oxide 弗萨姆材料美国有限责任公司 2021-09-10 CN claimed
EP-3844319-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2021-07-07 EP claimed
CN-112969816-A Compositions for high temperature atomic layer deposition of high quality silicon oxide films 弗萨姆材料美国有限责任公司 2021-06-15 CN claimed
WO-2020072768-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2020-04-09 WO claimed
US-20170256399-A9 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2017-09-07 US claimed
CN-103374708-B High temperature atomic layer deposition of silicon oxide thin films 气体产品与化学公司 2017-05-17 CN claimed
US-20160365244-A1 High Temperature Atomic Layer Deposition Of Silicon Oxide Thin Films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-12-15 US claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
CN-103374708-A High temperature atomic layer deposition of silicon oxide thin films AIR PROD & CHEM 2013-10-30 CN claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed
US-8034673-B2 Film formation method and apparatus for forming silicon-containing insulating film doped with metal TOKYO ELECTRON LIMITED (JP) 2011-10-11 US claimed
US-20100004414-A1 POLYMERS FUNCTIONALIZED WITH IMIDE COMPOUNDS CONTAINING A PROTECTED AMINO GROUP BRIDGESTONE CORPORATION (JP) 2010-01-07 US claimed
US-20090263975-A1 FILM FORMATION METHOD AND APPARATUS FOR FORMING SILICON-CONTAINING INSULATING FILM DOPED WITH METAL TOKYO ELECTRON LIMITED (JP) 2009-10-22 US claimed