SCHEMBL2511558

SCHEMBL2511558

CC[Si](CC)(CC)N[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2508674 0.72
Lithium SCHEMBL29592603 0.67
SCHEMBL28645213 0.67
SCHEMBL28709429 0.67
SCHEMBL149430 0.64
SCHEMBL9189483 0.62
SCHEMBL25166709 0.61
SCHEMBL888418 0.61 TP53 (0.31)
SCHEMBL5403964 0.61 TP53 (0.31)
Hydrochloric Acid SCHEMBL25166787 0.59

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 92 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9012133-B2 Removal of alkaline crystal defects in lithographic patterning INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2015-04-21 US claimed
US-7129187-B2 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED (JP) 2006-10-31 US claimed
WO-2006019438-A2 LOW-TEMPERATURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION OF SILICON-NITROGEN-CONTAINING FILMS TOKYO ELECTRON LIMITED (JP) 2006-02-23 WO claimed
US-20060014399-A1 Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films TOKYO ELECTRON LIMITED 2006-01-19 US claimed
US-3983114-A Method of preparation of 6-aza uracile and its O-disilyl derivative NOBEL HOECHST CHIMIE (FR) 1976-09-28 US claimed
JP-61281868-A None JP disclosed
EP-4382481-A1 HETEROATOM-DOPED NANODIAMOND PARTICLES AND METHOD FOR PRODUCING HETEROATOM-DOPED NANODIAMOND PARTICLES Daicel Corporation (JP) 2024-06-12 EP disclosed
CN-117794856-A Heteroatom-doped nanodiamond particles and method for producing heteroatom-doped nanodiamond particles 株式会社大赛璐 2024-03-29 CN disclosed
US-20240044722-A1 TEMPERATURE SENSITIVE PROBE DAICEL CORPORATION (JP) 2024-02-08 US disclosed
EP-4269969-A1 TEMPERATURE SENSITIVE PROBE Daicel Corporation (JP) 2023-11-01 EP disclosed
CN-116670501-A Temperature sensitive probe 株式会社大赛璐 2023-08-29 CN disclosed
US-20220185676-A1 HETEROATOM-DOPED NANODIAMOND DAICEL CORPORATION (JP) 2022-06-16 US disclosed
US-4801468-A ACTIVE MATERIALS, DECOMPOSITION, GERMANIUM-HALOGEN COMPOUND, DISCHARGING CANON KABUSHIKI KAISHA (JP) 1989-01-31 US disclosed
US-4784874-A VAPOR DEPOSITION SEMICONDUCTOR FILMS CANON KABUSHIKI KAISHA (JP) 1988-11-15 US disclosed
US-4728528-A IRRADIATION OF ACTIVE SPECIES CANON KABUSHIKI KAISHA (JP) 1988-03-01 US disclosed
US-4726963-A VAPOR DEPOSITION OF DECOMPOSED GERMANIUM HALIDE AND ANOTHER ACTIVE MATERIAL CANON KABUSHIKI KAISHA (JP) 1988-02-23 US disclosed
US-4717585-A Process for forming deposited film CANON KABUSHIKI KAISHA (JP) 1988-01-05 US disclosed
US-4716048-A PREACTIVATION OF REACTANTS FOR CHEMICAL VAPOR DEPOSITION CANON KABUSHIKI KAISHA (JP) 1987-12-29 US disclosed
JP-S61281868-A FORMATION OF DEPOSITED FILM CANON INC 1986-12-12 JP disclosed
US-3983114-A Method of preparation of 6-aza uracile and its O-disilyl derivative NOBEL HOECHST CHIMIE (FR) 1976-09-28 US disclosed