⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL18434989 | 0.87 | — | — | |
| SCHEMBL15756180 | 0.82 | GBA1 (0.45) | — | |
| SCHEMBL36353 | 0.77 | KDM4E (0.44) | — | |
| SCHEMBL13935215 | 0.69 | CYP19A1 (0.31) | — | |
| SCHEMBL10658239 | 0.69 | ALDH1A1 (0.30) | — | |
| SCHEMBL10143338 | 0.68 | — | — | |
| SCHEMBL10064398 | 0.68 | KDM4E (0.44) | — | |
| SCHEMBL8050408 | 0.68 | — | — | |
| SCHEMBL18597177 | 0.67 | TFPI2 (0.38) | — | |
| Oxirane SCHEMBL5379132 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 8 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9905768-B2 | Semiconductor device and insulating layer-forming composition | FUJIFILM CORPORATION (JP) | 2018-02-27 | — | — | US | disclosed |
| US-20170005266-A1 | SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION | FUJIFILM CORPORATION (JP) | 2017-01-05 | — | — | US | disclosed |
| US-20170005266-A1 | SEMICONDUCTOR ELEMENT AND INSULATING LAYER-FORMING COMPOSITION | FUJIFILM CORPORATION (JP) | 2017-01-05 | — | — | US | disclosed |
| US-9400430-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-07-26 | — | — | US | disclosed |
| US-9400430-B2 | Actinic-ray- or radiation-sensitive resin composition, actinic-ray- or radiation-sensitive film, mask blank and method of forming pattern | FUJIFILM CORPORATION (JP) | 2016-07-26 | — | — | US | disclosed |
| US-20140242502-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-28 | — | — | US | disclosed |
| US-20140242502-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2014-08-28 | — | — | US | disclosed |
| WO-2013069812-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM, MASK BLANK AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2013-05-16 | — | — | WO | disclosed |