SCHEMBL1503455

SCHEMBL1503455

CN(C)[Si](C)(C)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 1/20 0.41
ESR2 Q92731 1/20 0.41
ALDH1A1 P00352 2/20 0.35
TSHR P16473 2/20 0.35
KCNN4 O15554 1/20 0.35
NR1H2 P55055 2/20 0.33
NR1H3 Q13133 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
SLC6A2 P23975 1/20 0.33
SLC6A4 P31645 1/20 0.33
MEN1 O00255 1/20 0.33
HTT P42858 1/20 0.33
KMT2A Q03164 1/20 0.33
MAPT P10636 2/20 0.32
NR1I2 O75469 1/20 0.32
HTR2A P28223 1/20 0.32
HRH1 P35367 1/20 0.32
AOC3 Q16853 1/20 0.32
OPRM1 P35372 1/20 0.32
OPRK1 P41145 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13220839 0.85 ALDH1A1 (0.30) ALDH1A1TSHR
SCHEMBL22200163 0.83 ESR1 (0.41) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL28869260 0.79 ESR1 (0.38) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL17831222 0.78 NR1H2 (0.38) NR1H2NR1H3
SCHEMBL15166741 0.78 ESR1 (0.41) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL1203911 0.78 ESR1 (0.41) ESR1ESR2ALDH1A1TSHRKCNN4
SCHEMBL26361047 0.77 KMT2A (0.39) ESR1ESR2SMN1; SMN2MEN1HTT
SCHEMBL29552450 0.77 TAAR1 (0.38) ESR1ESR2ALDH1A1TSHRMAPT
SCHEMBL20499845 0.75 MAPT (0.36) ESR1ESR2ALDH1A1TSHRSLC6A2
SCHEMBL1526078 0.75 ESR1 (0.35) ESR1ESR2ALDH1A1TSHRKCNN4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 151 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11862471-B2 Manufacturing method for semiconductor device KIOXIA CORPORATION (JP) 2024-01-02 US claimed
US-11631580-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials VERSUM MATERIALS US, LLC (US) 2023-04-18 US claimed
US-20220238345-A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE KIOXIA CORPORATION (JP) 2022-07-28 US claimed
US-20220189767-A1 FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2022-06-16 US claimed
US-11081337-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials Versum Materials U.S., LLC (US) 2021-08-03 US claimed
CN-110573651-A Novel formulations for the deposition of silicon-doped hafnium oxide as ferroelectric material 弗萨姆材料美国有限责任公司 2019-12-13 CN claimed
WO-2018170126-A1 NEW FORMULATION FOR DEPOSITION OF SILICON DOPED HAFNIUM OXIDE AS FERROELECTRIC MATERIALS VERSUM MATERIALS US, LLC (US) 2018-09-20 WO claimed
US-20180269057-A1 Formulation for Deposition of Silicon Doped Hafnium Oxide as Ferroelectric Materials VERSUM MATERIALS US, LLC (US) 2018-09-20 US claimed
US-9460912-B2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-10-04 US claimed
US-6743737-B2 FORMING INTEGRATED CIRCUITS; PLASMA VAPOR DEPOSITION APPLIED MATERIALS, INC. 2004-06-01 US claimed
US-20030054667-A1 Method of improving moisture resistance of low dielectric constant films APPLIED MATERIALS, INC. 2003-03-20 US claimed
US-6448187-B2 DEPOSITING A SILICON OXIDE FILM BY OXIDATION OF SILICON COMPOUND, EXPOSING TO WATER OR A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE AND CURING APPLIED MATERIALS, INC. 2002-09-10 US claimed
US-20010026849-A1 Method of improving moisture resistance of low dielectric constant films APPLIED MATERIALS, INC. 2001-10-04 US claimed
US-6245690-B1 EXPOSING PLASMA ENHANCED CHEMICAL VAPOR DEPOSITED FILM OF OXIDIZED ORGANOSILICON COMPOUND TO A HYDROPHOBIC-IMPARTING SURFACTANT SUCH AS HEXAMETHYLDISILAZANE PRIOR TO THERMALLY CURING TO CONTROL CARBON CONTENT IN DEPOSITED FILM APPLIED MATERIALS, INC. 2001-06-12 US claimed
US-11965111-B2 Surface treatment agent and surface treatment method TOKYO OHKA KOGYO CO., LTD. (JP) 2024-04-23 US disclosed
US-11862471-B2 Manufacturing method for semiconductor device KIOXIA CORPORATION (JP) 2024-01-02 US disclosed
US-11631580-B2 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials VERSUM MATERIALS US, LLC (US) 2023-04-18 US disclosed
US-3933898-A ANTIULCER, ANTICOAGULANTS, NASAL PATENCY, LABOR INDUCERS, WOUND HEALING THE UPJOHN COMPANY (US) 1976-01-20 US disclosed
US-3933897-A ANTIULCER, ASTHMA, RENAL DYSFUNCTION THE UPJOHN COMPANY (US) 1976-01-20 US disclosed
US-3933895-A PROSTAGLANDINS, ANTIULCER, ANTICOAGULANTS, NASAL PATENCY, LABOR INDUCERS, WOUND HEALING THE UPJOHN COMPANY (US) 1976-01-20 US disclosed