Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9349301 | 0.86 | ALDH1A1 (0.33) | ALDH1A1TSHR | |
| SCHEMBL122904 | 0.86 | — | — | |
| SCHEMBL339308 | 0.86 | — | — | |
| SCHEMBL20582613 | 0.86 | ALDH1A1 (0.30) | ALDH1A1TSHR | |
| SCHEMBL20658916 | 0.86 | TSHR (0.39) | ALDH1A1TSHR | |
| SCHEMBL690956 | 0.86 | — | — | |
| SCHEMBL2384789 | 0.86 | ALDH1A1 (0.30) | ALDH1A1TSHR | |
| SCHEMBL20952201 | 0.86 | ALDH1A1 (0.30) | ALDH1A1TSHR | |
| SCHEMBL20952386 | 0.86 | ALDH1A1 (0.30) | ALDH1A1TSHR | |
| SCHEMBL105921 | 0.86 | ALDH1A1 (0.30) | ALDH1A1TSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 20 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2298714-B1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | MITSUBISHI MATERIALS CORP (JP) | 2017-07-05 | — | — | EP | disclosed |
| US-9502636-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9005358-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-20140349139-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349834-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2014-11-27 | — | — | US | disclosed |
| US-8859051-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8790538-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-20130295414-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| US-20110177235-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2011-07-21 | — | — | US | disclosed |
| EP-2343268-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | Mitsubishi Materials Corporation (JP) | 2011-07-13 | — | — | EP | disclosed |
| US-20110098173-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | STMicroelectronics(Tours) SAS (FR) | 2011-04-28 | — | — | US | disclosed |
| EP-2298714-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | Mitsubishi Materials Corporation (JP) | 2011-03-23 | — | — | EP | disclosed |
| EP-1671984-B9 | Modified particles, catalyst for olefin polymerization using the same, and process of producing olefin polymer | SUMITOMO CHEMICAL CO (JP) | 2009-03-18 | — | — | EP | disclosed |
| EP-1671984-B1 | Modified particles, catalyst for olefin polymerization using the same, and process of producing olefin polymer | SUMITOMO CHEMICAL CO (JP) | 2008-03-05 | — | — | EP | disclosed |
| EP-1671984-A1 | Modified particles, catalyst for olefin polymerization using the same, and process of producing olefin polymer | Sumitomo Chemical Company, Limited (JP) | 2006-06-21 | — | — | EP | disclosed |
| EP-1500668-A1 | Modified particles, catalyst for olefin polymerization using the same, and process of producing olefin polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2005-01-26 | — | — | EP | disclosed |
| EP-1342734-A1 | Modified particles, catalyst for olefin polymerization using the same, and process of producing olefin polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-09-10 | — | — | EP | disclosed |
| US-6528596-B2 | Contacting particles with metal compound selected from compounds of Groups VI, VII and XIV metal elements and compounds of the lanthanide series, then contacting resulting particles with compound having active hydrogen or lewis base | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2003-03-04 | — | — | US | disclosed |
| EP-1114832-A1 | Modified particles, catalyst for olefin polymerization using the same, and process of producing olefin polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2001-07-11 | — | — | EP | disclosed |
| US-20010007007-A1 | Modified particles, catalyst for olefin polymerization using the same, and process of producing olefin polymer | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2001-07-05 | — | — | US | disclosed |