Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | DGKA | P23743 | 1/20 | 0.68 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.61 |
| ▸ | PAM | P19021 | 2/20 | 0.61 |
| ▸ | TSHR | P16473 | 2/20 | 0.57 |
| ▸ | MAPT | P10636 | 1/20 | 0.57 |
| ▸ | LMNA | P02545 | 4/20 | 0.55 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.55 |
| ▸ | DNM1 | Q05193 | 1/20 | 0.55 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.53 |
| ▸ | DUSP3 | P51452 | 1/20 | 0.53 |
| ▸ | MEN1 | O00255 | 1/20 | 0.53 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.53 |
| ▸ | PRKCA | P17252 | 1/20 | 0.50 |
| ▸ | PRKCE | Q02156 | 1/20 | 0.50 |
| ▸ | PRKCQ | Q04759 | 1/20 | 0.50 |
| ▸ | PRKCD | Q05655 | 1/20 | 0.50 |
| ▸ | MGAM | O43451 | 1/20 | 0.50 |
| ▸ | GAA | P10253 | 1/20 | 0.50 |
| ▸ | SI | P14410 | 1/20 | 0.50 |
| ▸ | MGAM2 | Q2M2H8 | 1/20 | 0.50 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL31352662 | 0.98 | DGKA (0.71) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL37297 | 0.98 | DGKA (0.71) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL2309907 | 0.95 | DGKA (0.68) | DGKACYP1A2PAMTSHRMAPT | |
| Hexane SCHEMBL2349171 | 0.95 | DGKA (0.75) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL116995 | 0.95 | DGKA (0.75) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL20543804 | 0.95 | DGKA (0.68) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL8375548 | 0.95 | DGKA (0.75) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL19252993 | 0.95 | DGKA (0.68) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL2558423 | 0.95 | DGKA (0.68) | DGKACYP1A2PAMTSHRMAPT | |
| SCHEMBL22129520 | 0.95 | DGKA (0.68) | DGKACYP1A2PAMTSHRMAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2436661-B1 | Composition for ferroelectric thin film formation and method for forming ferroelectric thin film | MITSUBISHI MATERIALS CORP (JP) | 2016-03-30 | — | — | EP | claimed |
| US-8859051-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-10-14 | — | — | US | claimed |
| US-9502636-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| EP-2436661-B1 | Composition for ferroelectric thin film formation and method for forming ferroelectric thin film | MITSUBISHI MATERIALS CORP (JP) | 2016-03-30 | — | — | EP | disclosed |
| US-9005358-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2015-04-14 | — | — | US | disclosed |
| US-20140349139-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-11-27 | — | — | US | disclosed |
| US-20140349834-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2014-11-27 | — | — | US | disclosed |
| US-8859051-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-10-14 | — | — | US | disclosed |
| US-8790538-B2 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | MITSUBISHI MATERIALS CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-20130295414-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORP (JP) | 2013-11-07 | — | — | US | disclosed |
| US-20110177235-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FORMING FERROELECTRIC THIN FILM, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD THEREOF | MITSUBISHI MATERIALS CORPORATION (JP) | 2011-07-21 | — | — | US | disclosed |
| EP-2343268-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | Mitsubishi Materials Corporation (JP) | 2011-07-13 | — | — | EP | disclosed |
| US-20110098173-A1 | Composition for ferroelectric thin film formation, method for forming ferroelectric thin film, and ferroelectric thin film formed by the method thereof | STMicroelectronics(Tours) SAS (FR) | 2011-04-28 | — | — | US | disclosed |
| EP-2298714-A1 | COMPOSITION FOR FERROELECTRIC THIN FILM FORMATION, METHOD FOR FERROELECTRIC THIN FILM FORMATION, AND FERROELECTRIC THIN FILM FORMED BY THE METHOD | Mitsubishi Materials Corporation (JP) | 2011-03-23 | — | — | EP | disclosed |