Tetramethylammonium Ion

Tetramethylammonium Ion

SCHEMBL1507263

C[N+](C)(C)C.C[N+](C)(C)C.O=S(=O)([O-])OS(=O)(=O)O[O-]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Potassium Ion SCHEMBL35667 0.86
SCHEMBL7132259 0.86
SCHEMBL2785791 0.86
Lithium Ion SCHEMBL909415 0.86
Silver SCHEMBL5460379 0.86
SCHEMBL6695992 0.86
SCHEMBL7135981 0.86
SCHEMBL6620949 0.86
SCHEMBL11268942 0.86
SCHEMBL21906 0.86 MEN1 (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8026200-B2 Low pH mixtures for the removal of high density implanted resist ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2011-09-27 US claimed
EP-2288965-A2 LOW PH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST Advanced Technology Materials, Inc. (US) 2011-03-02 EP claimed
US-20090281016-A1 LOW pH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2009-11-12 US claimed
WO-2009135102-A2 LOW PH MIXTURES FOR THE REMOVAL OF HIGH DENSITY IMPLANTED RESIST ADVANCED TECHNOLOGY MATERIALS, INC. (US) 2009-11-05 WO claimed
US-20080196626-A1 High silicon-content resin composition used to form thin film thermosets; form low k dielectric constant materials; hard mask and underlayer materials with anti-reflective properties for photolithography industry MERCK PATENT GMBH (DE) 2008-08-21 US claimed
EP-2450412-A1 Silicone coating composition AZ Electronic Materials USA Corp. (US) 2012-05-09 EP disclosed
US-8026040-B2 High silicon-content resin composition used to form thin film thermosets; form low k dielectric constant materials; hard mask and underlayer materials with anti-reflective properties for photolithography industry AZ ELECTRONIC MATERIALS USA CORP. (US) 2011-09-27 US disclosed
EP-2121857-A1 SILICONE COATING COMPOSITION AZ Electronic Materials USA Corp. (US) 2009-11-25 EP disclosed
WO-2008102256-A1 SILICONE COATING COMPOSITION AZ ELECTRONIC MATERIALS USA CORP. (DE) 2008-08-28 WO disclosed
EP-0985664-B1 Method of producing pyrrolidine derivatives TORAY FINECHEMICALS CO LTD (JP) 2004-03-31 EP disclosed
US-6479668-B1 Method of producing pyrrolidine derivatives TORAY INDUSTRIES, INC. (JP) 2002-11-12 US disclosed
US-6130338-A OXIDATING THE CORRESPONDING 3-PYRROLINE COMPOUND TO GIVE AN EPOXYPYRROLIDINE COMPOUND TORAY INDUSTRIES, INC. (JP) 2000-10-10 US disclosed
EP-0985664-A2 Method of producing pyrrolidine derivatives TORAY INDUSTRIES, INC. (JP) 2000-03-15 EP disclosed