SCHEMBL15310041

SCHEMBL15310041

C=C[SiH2]C(NC(C)(C)C)NC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL25168531 0.73
SCHEMBL2101866 0.69
SCHEMBL3678238 0.67
SCHEMBL10058167 0.63
SCHEMBL14376338 0.63
SCHEMBL10058635 0.63
SCHEMBL20385386 0.61
SCHEMBL25175057 0.59
SCHEMBL90103 0.58
SCHEMBL15310080 0.58

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 57 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12584212-B2 Compositions and methods using same for germanium seed layer VERSUM MATERIALS US, LLC (US) 2026-03-24 US claimed
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US claimed
US-20230287562-A1 COMPOSITIONS ND METHODS USING SAME FOR GERMANIUM SEED LAYER VERSUM MATERIALS US, LLC 2023-09-14 US claimed
US-11649547-B2 Deposition of carbon doped silicon oxide VERSUM MATERIALS US, LLC (US) 2023-05-16 US claimed
EP-4176100-A1 COMPOSITIONS AND METHODS USING SAME FOR GERMANIUM SEED LAYER Versum Materials US, LLC (US) 2023-05-10 EP claimed
US-20210363639-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2021-11-25 US claimed
EP-3902939-A1 DEPOSITION OF CARBON DOPED SILICON OXIDE Versum Materials US, LLC (US) 2021-11-03 EP claimed
EP-3844319-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS Versum Materials US, LLC (US) 2021-07-07 EP claimed
WO-2020163359-A1 DEPOSITION OF CARBON DOPED SILICON OXIDE VERSUM MATERIALS US, LLC (US) 2020-08-13 WO claimed
US-20200248309-A1 Deposition Of Carbon Doped Silicon Oxide VERSUM MATERIALS US, LLC (US) 2020-08-06 US claimed
WO-2020072768-A1 COMPOSITION FOR HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF HIGH QUALITY SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC (US) 2020-04-09 WO claimed
US-9460912-B2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-10-04 US claimed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US claimed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP claimed
US-12584212-B2 Compositions and methods using same for germanium seed layer VERSUM MATERIALS US, LLC (US) 2026-03-24 US disclosed
EP-4705309-A1 CHLOROSILYL-SUBSTITUTED SILACYCLOALKANES AND THEIR USE FOR FORMATION OF FILMS COMPRISING SILICON AND OXYGEN Versum Materials US, LLC (US) 2026-03-11 EP disclosed
US-12421603-B2 Composition for high temperature atomic layer deposition of high quality silicon oxide thin films VERSUM MATERIALS US, LLC (US) 2025-09-23 US disclosed
US-9460912-B2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2016-10-04 US disclosed
US-20130295779-A1 HIGH TEMPERATURE ATOMIC LAYER DEPOSITION OF SILICON OXIDE THIN FILMS VERSUM MATERIALS US, LLC 2013-11-07 US disclosed
EP-2650399-A2 High temperature atomic layer deposition of silicon oxide thin films AIR PRODUCTS AND CHEMICALS, INC. (US) 2013-10-16 EP disclosed