SCHEMBL15701003

SCHEMBL15701003

CCCCCCCCCCCCC(F)(F)C(F)(F)C(F)(F)C(F)(F)S(=O)(=O)O

nearest known ligand 0.42

Predicted protein targets (top 11)

geneUniProtsupporting neighboursconfidence
CES2 O00748 4/20 0.42
LPAR1 Q92633 1/20 0.42
LPAR3 Q9UBY5 1/20 0.42
EPHX1 P07099 2/20 0.41
CES1 P23141 9/20 0.38
FAAH O00519 9/20 0.38
MEN1 O00255 1/20 0.36
CYP1A2 P05177 1/20 0.36
KMT2A Q03164 1/20 0.36
HSD17B10 Q99714 1/20 0.36
GGPS1 O95749 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18008466 1.00 CES2 (0.42) CES2LPAR1LPAR3EPHX1CES1
SCHEMBL18008051 1.00 CES2 (0.42) CES2LPAR1LPAR3EPHX1CES1
SCHEMBL18009133 1.00 CES2 (0.42) CES2LPAR1LPAR3EPHX1CES1
Ammonia Solution, Strong SCHEMBL18007869 0.98 CES2 (0.41) CES2LPAR1LPAR3EPHX1CES1
SCHEMBL18007910 0.98 CES2 (0.41) CES2LPAR1LPAR3EPHX1CES1
Ammonia Solution, Strong SCHEMBL18008376 0.98 CES2 (0.41) CES2LPAR1LPAR3EPHX1CES1
SCHEMBL18008916 0.98 CES2 (0.41) CES2LPAR1LPAR3EPHX1CES1
SCHEMBL18007894 0.98 CES2 (0.41) CES2LPAR1LPAR3EPHX1CES1
SCHEMBL18008236 0.98 CES2 (0.39) CES2LPAR1LPAR3EPHX1CES1
Ammonia Solution, Strong SCHEMBL18008168 0.97 CES2 (0.40) CES2LPAR1LPAR3EPHX1CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170059992-A1 RESIST PATTERN-FORMING METHOD AND CHEMICALLY AMPLIFIED RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2017-03-02 US disclosed
US-9046782-B2 Resist composition for negative tone development and pattern forming method using the same FUJIFILM CORPORATION (JP) 2015-06-02 US disclosed
US-9023579-B2 Actinic-ray- or radiation-sensitive resin composition, compound and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-05-05 US disclosed
US-8709704-B2 Pattern forming method using developer containing organic solvent and rinsing solution for use in the pattern forming method FUJIFILM CORPORATION (JP) 2014-04-29 US disclosed