Known targets — ChEMBL curated mechanism
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL3467470 | 0.82 | — | — | |
| SCHEMBL33275 | 0.82 | — | — | |
| SCHEMBL34700 | 0.82 | — | — | |
| SCHEMBL14841962 | 0.67 | — | — | |
| SCHEMBL2289595 | 0.67 | — | — | |
| SCHEMBL1796527 | 0.67 | — | — | |
| SCHEMBL5434695 | 0.67 | — | — | |
| SCHEMBL3103425 | 0.67 | — | — | |
| SCHEMBL2539870 | 0.67 | — | — | |
| SCHEMBL391163 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9054021-B2 | Transistors and fabrication method | Semiconductor Manufacturing International Corp (CN) | 2015-06-09 | — | — | US | claimed |
| US-20150060767-A1 | NANOWIRES AND NANOWIRE FIELDE-EFFECT TRANSISTORS | SEMICONDUCTOR MFG INT CORP (CN) | 2015-03-05 | — | — | US | claimed |
| US-20140151705-A1 | NANOWIRES, NANOWIRE FIELDE-EFFECT TRANSISTORS AND FABRICATION METHOD | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2014-06-05 | — | — | US | claimed |
| US-20140145269-A1 | TRANSISTORS AND FABRICATION METHOD | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2014-05-29 | — | — | US | claimed |
| US-9054021-B2 | Transistors and fabrication method | Semiconductor Manufacturing International Corp (CN) | 2015-06-09 | — | — | US | disclosed |
| US-20150060767-A1 | NANOWIRES AND NANOWIRE FIELDE-EFFECT TRANSISTORS | SEMICONDUCTOR MFG INT CORP (CN) | 2015-03-05 | — | — | US | disclosed |
| US-8912545-B2 | Nanowires, nanowire fielde-effect transistors and fabrication method | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2014-12-16 | — | — | US | disclosed |
| US-8859354-B2 | Transistors and fabrication method thereof | Semiconductor Manufacturing International Corp (CN) | 2014-10-14 | — | — | US | disclosed |
| US-20140151637-A1 | TRANSISTORS AND FABRICATION METHOD THEREOF | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2014-06-05 | — | — | US | disclosed |
| US-20140151705-A1 | NANOWIRES, NANOWIRE FIELDE-EFFECT TRANSISTORS AND FABRICATION METHOD | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2014-06-05 | — | — | US | disclosed |
| US-20140145269-A1 | TRANSISTORS AND FABRICATION METHOD | SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORP. (CN) | 2014-05-29 | — | — | US | disclosed |