SCHEMBL15768471

SCHEMBL15768471

CCO[SiH](N[SiH](OCC)OCC)OCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15785139 0.82
SCHEMBL27851920 0.76
SCHEMBL27851827 0.73
SCHEMBL28576039 0.73
SCHEMBL5014095 0.69
SCHEMBL15135116 0.69 LMNA (0.30)
SCHEMBL15135200 0.69
SCHEMBL28991503 0.69
SCHEMBL28991950 0.67
SCHEMBL15135120 0.66

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250188609-A1 SEAM-FREE AND CRACK-FREE DEPOSITION LAM RES CORP (US) 2025-06-12 US disclosed
US-20250054747-A1 CONFORMAL DEPOSITION OF SILICON NITRIDE LAM RES CORP (US) 2025-02-13 US disclosed
US-20250038003-A1 LOW TEMPERATURE MOLYBDENUM DEPOSITION ASSISTED BY SILICON-CONTAINING REACTANTS LAM RESEARCH CORPORATION (US) 2025-01-30 US disclosed
US-20250014890-A1 CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF LAM RESEARCH CORPORATION 2025-01-09 US disclosed
CN-119213529-A Seamless and crack-free deposition 朗姆研究公司 2024-12-27 CN disclosed
WO-2024243002-A1 LOW PRESSURE CHEMICAL VAPOR DEPOSITION OF SILICON OXIDE LAM RESEARCH CORPORATION (US) 2024-11-28 WO disclosed
CN-118402040-A Low temperature molybdenum deposition assisted by silicon-containing reactants 朗姆研究公司 2024-07-26 CN disclosed
CN-118402039-A Conformal deposition of silicon nitride 朗姆研究公司 2024-07-26 CN disclosed
CN-118355473-A Conformal carbon-doped silicon nitride films and methods thereof 朗姆研究公司 2024-07-16 CN disclosed
US-20240030062-A1 INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION LAM RESEARCH CORPORATION 2024-01-25 US disclosed
WO-2023114641-A1 CONFORMAL DEPOSITION OF SILICON NITRIDE LAM RESEARCH CORPORATION (US) 2023-06-22 WO disclosed
WO-2023102440-A1 CONFORMAL, CARBON-DOPED SILICON NITRIDE FILMS AND METHODS THEREOF LAM RESEARCH CORPORATION (US) 2023-06-08 WO disclosed
WO-2022221881-A1 INTEGRATION OF FULLY ALIGNED VIA THROUGH SELECTIVE DEPOSITION AND RESISTIVITY REDUCTION LAM RESEARCH CORPORATION (US) 2022-10-20 WO disclosed
CN-114466903-A Organosilicon-based products and their use 美国陶氏有机硅公司 2022-05-10 CN disclosed
US-10899500-B2 Alkoxysilylamine compounds and applications thereof VERSUM MATERIALS US, LLC (US) 2021-01-26 US disclosed
US-20190225377-A1 Alkoxysilylamine Compounds and Applications Thereof VERSUM MATERIALS US, LLC (US) 2019-07-25 US disclosed
US-10279959-B2 Alkoxysilylamine compounds and applications thereof VERSUM MATERIALS US, LLC (US) 2019-05-07 US disclosed
EP-2743272-B1 Alkoxysilylamine compounds and applications thereof AIR PROD & CHEM (US) 2016-11-02 EP disclosed
EP-2743272-A1 Alkoxysilylamine compounds and applications thereof AIR PRODUCTS AND CHEMICALS, INC. (US) 2014-06-18 EP disclosed
US-20140158580-A1 ALKOXYSILYLAMINE COMPOUNDS AND APPLICATIONS THEREOF AIR PRODUCTS AND CHEMICALS, INC. (US) 2014-06-12 US disclosed