SCHEMBL1606337

SCHEMBL1606337

CC1CCC(OS(=O)(=O)OC2CCC(C)CC2)CC1

nearest known ligand 0.36

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
CA1 P00915 1/20 0.36
CA2 P00918 1/20 0.36
CYP19A1 P11511 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5639385 0.82 CA1 (0.34) CA1CA2
SCHEMBL6132278 0.82 CA1 (0.34) CA1CA2
SCHEMBL6135269 0.82 CA1 (0.34) CA1CA2
SCHEMBL27183389 0.80 CA2 (0.60) CA1CA2
SCHEMBL1608287 0.79 CA1 (0.36) CA1CA2
SCHEMBL28286254 0.78 KDM4E (0.33) CA1CA2CYP19A1
SCHEMBL11887373 0.75 CA1 (0.30) CA1CA2
SCHEMBL1706406 0.75 CA1 (0.52) CA1CA2
SCHEMBL777246 0.75 CA1 (0.59) CA1CA2
SCHEMBL780321 0.74 CA1 (0.36) CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US claimed
US-5547806-A ADDING A DIALKYL SULFATE AND A POLYFUNCTIONAL ISOCYANATE COMPOUND; EMULSIFICATION; POLYMERIZATION; MICROENCAPSULATION FUJI PHOTO FILM CO., LTD. (JP) 1996-08-20 US claimed
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
US-5547806-A ADDING A DIALKYL SULFATE AND A POLYFUNCTIONAL ISOCYANATE COMPOUND; EMULSIFICATION; POLYMERIZATION; MICROENCAPSULATION FUJI PHOTO FILM CO., LTD. (JP) 1996-08-20 US disclosed