SCHEMBL1607441

SCHEMBL1607441

CC(C)COc1ccc(S(=O)(=O)O)cc1N

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.47
GAA P10253 1/20 0.47
HSD17B10 Q99714 3/20 0.47
CYP2C19 P33261 2/20 0.46
XDH P47989 1/20 0.45
POLB P06746 1/20 0.45
CA1 P00915 1/20 0.43
CA2 P00918 1/20 0.43
MMP1 P03956 1/20 0.43
MMP2 P08253 1/20 0.43
MMP9 P14780 1/20 0.43
MMP8 P22894 1/20 0.43
MMP13 P45452 1/20 0.43
CYP2C9 P11712 1/20 0.43
CASP6 P55212 1/20 0.43
F2 P00734 3/20 0.41
PRSS1 P07477 3/20 0.41
PRSS2 P07478 3/20 0.41
PRSS3 P35030 3/20 0.41
S1PR3 Q99500 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1607305 0.83 HSD17B10 (0.57) ALDH1A1HSD17B10CYP2C19POLBCA1
SCHEMBL14323535 0.82 CA1 (0.48) ALDH1A1GAACYP2C19XDHPOLB
SCHEMBL10774587 0.79 ALDH1A1 (0.47) ALDH1A1GAAHSD17B10CYP2C19POLB
SCHEMBL27447483 0.78 ALDH1A1 (0.50) ALDH1A1GAAHSD17B10CYP2C19POLB
SCHEMBL11227002 0.78 ALDH1A1 (0.50) ALDH1A1GAAHSD17B10CYP2C19POLB
SCHEMBL155353 0.77 CA1 (0.68) ALDH1A1GAAHSD17B10CYP2C19POLB
SCHEMBL29022400 0.77 ALDH1A1 (0.49) ALDH1A1GAAHSD17B10CYP2C19POLB
SCHEMBL152784 0.76 ALDH1A1 (0.59) ALDH1A1GAAHSD17B10CYP2C19XDH
Potassium SCHEMBL14988998 0.76 CA1 (0.66) ALDH1A1GAAHSD17B10CYP2C19POLB
SCHEMBL14988995 0.76 CA1 (0.66) ALDH1A1GAAHSD17B10CYP2C19POLB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 15 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8313892-B2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2012-11-20 US claimed
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-8313892-B2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2012-11-20 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
EP-1612603-A2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2006-01-04 EP disclosed
US-20050277055-A1 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2005-12-15 US disclosed
EP-0662694-B1 Soluble aniline conducting polymers MITSUBISHI RAYON CO (JP) 2002-02-27 EP disclosed
US-5932144-A ALKOXY GROUP SUBSTITUTED AMINOBENZENESULFONIC ACID, OR SALT THEREOF MITSUBISHI RAYON CO., LTD. (JP) 1999-08-03 US disclosed
US-5700399-A Soluble alkoxy-group substituted aminobenzenesulfonic acid aniline conducting polymers NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1997-12-23 US disclosed
US-5589108-A Soluble alkoxy-group substituted aminobenzenesulfonic acid aniline conducting polymers NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1996-12-31 US disclosed
EP-0662694-A2 Soluble aniline conducting polymers NITTO CHEMICAL INDUSTRY CO., LTD. (JP) 1995-07-12 EP disclosed