SCHEMBL1607735

SCHEMBL1607735

CCC(c1ccoc1)S(=O)(=O)O

nearest known ligand 0.39

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALOX5 P09917 1/20 0.39
TRPA1 O75762 1/20 0.33
CYP3A4 P08684 1/20 0.33
PTGS1 P23219 1/20 0.32
PTGS2 P35354 1/20 0.32
CXCR1 P25024 1/20 0.32
CXCR2 P25025 1/20 0.32
SRC P12931 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL1607302 0.86 ALOX5 (0.37) ALOX5TRPA1CYP3A4PTGS1PTGS2
SCHEMBL1607909 0.83 ALOX5 (0.36) ALOX5TRPA1CYP3A4
SCHEMBL1606698 0.76 ALOX5 (0.46) ALOX5TRPA1CYP3A4PTGS1PTGS2
SCHEMBL249115 0.73 SRC (0.53) SRC
SCHEMBL3398560 0.73 SRC (0.53) SRC
SCHEMBL3398553 0.73 SRC (0.53) SRC
SCHEMBL5357827 0.72 SRC (0.34) SRC
SCHEMBL8888714 0.71
SCHEMBL2011539 0.71
SCHEMBL3140883 0.70 CYP1A2 (0.40) ALOX5

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2138897-B1 CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN FUJITSU LTD (JP) 2016-08-03 EP disclosed
US-8795951-B2 Material for forming resist sensitization film and production method of semiconductor device FUJITSU LIMITED (JP) 2014-08-05 US disclosed
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-8313892-B2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2012-11-20 US disclosed
US-20110081615-A1 MATERIAL FOR FORMING RESIST SENSITIZATION FILM AND PRODUCTION METHOD OF SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2011-04-07 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2138897-A1 MATERIAL FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF CONDUCTIVE ANTI-REFLECTION FILM, METHOD FOR FORMATION OF RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD Fujitsu Limited (JP) 2009-12-30 EP disclosed
EP-1612603-A2 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2006-01-04 EP disclosed
US-20050277055-A1 Multi-layer body, method for forming resist pattern, method for manufacturing device having pattern by fine processing and electronic device FUJITSU LIMITED (JP) 2005-12-15 US disclosed
EP-0459255-B1 Method for suppression of electrification HITACHI LTD (JP) 1998-03-18 EP disclosed
US-5589270-A Processed substrate obtained by a process for effecting suppression of electrification HITACHI, LTD. (JP) 1996-12-31 US disclosed
US-5437893-A Method for suppression of electrification HITACHI, LTD (JP) 1995-08-01 US disclosed
US-5256454-A Method for suppression of electrification HITACHI, LTD. (JP) 1993-10-26 US disclosed
EP-0459255-A2 Method for suppression of electrification HITACHI, LTD. (JP) 1991-12-04 EP disclosed