Ethyne

Ethyne

SCHEMBL1617554

C#C.C#C.CCO[SiH2]C

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL432066 0.93
Water SCHEMBL28313887 0.89
Cyclopropane SCHEMBL27752609 0.83
SCHEMBL17099434 0.76
Ethyne SCHEMBL28263396 0.74
Biphenyl SCHEMBL8087057 0.70 ALDH1A1 (0.43)
SCHEMBL2784770 0.65
SCHEMBL109023 0.65
SCHEMBL15525005 0.65
SCHEMBL14163938 0.64

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7799705-B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups NOVELLUS SYSTEMS, INC. (US) 2010-09-21 US claimed
US-7473653-B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups NOVELLUS SYSTEMS, INC. (US) 2009-01-06 US claimed
US-7241704-B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups NOVELLUS SYSTEMS, INC. (US) 2007-07-10 US claimed
US-7923385-B2 Methods for producing low stress porous and CDO low-K dielectric materials using precursors with organic functional groups NOVELLUS SYSTEMS, INC. (US) 2011-04-12 US disclosed
US-7799705-B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups NOVELLUS SYSTEMS, INC. (US) 2010-09-21 US disclosed
US-20090239390-A1 METHODS FOR PRODUCING LOW STRESS POROUS AND CDO LOW-K DIELECTRIC MATERIALS USING PRECURSORS WITH ORGANIC FUNCTIONAL GROUPS NOVELLUS SYSTEMS, INC. (US) 2009-09-24 US disclosed
US-7479191-B1 Method for endpointing CVD chamber cleans following ultra low-k film treatments NOVELLUS SYSTEMS, INC. (US) 2009-01-20 US disclosed
US-7473653-B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups NOVELLUS SYSTEMS, INC. (US) 2009-01-06 US disclosed
US-7241704-B1 Methods for producing low stress porous low-k dielectric materials using precursors with organic functional groups NOVELLUS SYSTEMS, INC. (US) 2007-07-10 US disclosed