⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2735062 | 0.82 | — | — | |
| SCHEMBL14593392 | 0.80 | — | — | |
| SCHEMBL14593338 | 0.80 | — | — | |
| SCHEMBL111440 | 0.79 | — | — | |
| SCHEMBL9608712 | 0.77 | — | — | |
| SCHEMBL14356215 | 0.77 | — | — | |
| SCHEMBL14356209 | 0.74 | — | — | |
| SCHEMBL12193723 | 0.74 | NR1H2 (0.31) | — | |
| SCHEMBL12193710 | 0.73 | — | — | |
| SCHEMBL13309983 | 0.72 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 49 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11762287-B2 | Onium salt compound, chemically amplified resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-09-19 | — | — | US | disclosed |
| US-20230205083-A1 | SALT COMPOUND, RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-06-29 | — | — | US | disclosed |
| US-9835945-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-12-05 | — | — | US | disclosed |
| US-9798235-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-10-24 | — | — | US | disclosed |
| US-20170255098-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2017-09-07 | — | — | US | disclosed |
| US-9703196-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2017-07-11 | — | — | US | disclosed |
| US-20170123318-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-9541831-B2 | Positive resist composition and method of pattern formation with the same | FUJIFILM CORPORATION (JP) | 2017-01-10 | — | — | US | disclosed |
| US-20160370701-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2016-12-22 | — | — | US | disclosed |
| US-9465292-B2 | Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same | FUJIFILM CORPORATION (JP) | 2016-10-11 | — | — | US | disclosed |
| US-20120135355-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120115085-A1 | POSITIVE RESIST COMPOSITION AND METHOD OF PATTERN FORMATION WITH THE SAME | FUJIFILM CORPORATION (JP) | 2012-05-10 | — | — | US | disclosed |
| US-20120088194-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-04-12 | — | — | US | disclosed |
| US-20120015302-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-20120015293-A1 | POSITIVE TYPE RESIST COMPOSITION FOR USE IN LIQUID IMMERSION EXPOSURE AND A METHOD OF FORMING THE PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-19 | — | — | US | disclosed |
| US-8088557-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2012-01-03 | — | — | US | disclosed |
| US-20110269072-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2011-11-03 | — | — | US | disclosed |
| US-20110183258-A1 | POSITIVE RESIST COMPOSITION, PATTERN FORMING METHOD USING THE COMPOSITION, AND COMPOUND FOR USE IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-07-28 | — | — | US | disclosed |
| US-20110076625-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-03-31 | — | — | US | disclosed |
| US-20110020755-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2011-01-27 | — | — | US | disclosed |