Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | CYP4F2 | P78329 | 1/20 | 0.33 |
| ▸ | CYP4A11 | Q02928 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.30 |
| ▸ | NPSR1 | Q6W5P4 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL120058 | 0.85 | CYP4F2 (0.33) | CYP4F2CYP4A11POLBNPSR1 | |
| SCHEMBL12939332 | 0.82 | CYP4F2 (0.34) | CYP4F2CYP4A11 | |
| SCHEMBL10181613 | 0.82 | CYP4F2 (0.34) | CYP4F2CYP4A11 | |
| SCHEMBL18199031 | 0.82 | CYP4F2 (0.34) | CYP4F2CYP4A11 | |
| SCHEMBL17676419 | 0.82 | CYP4F2 (0.34) | CYP4F2CYP4A11 | |
| SCHEMBL14770505 | 0.82 | CYP4F2 (0.36) | CYP4F2CYP4A11 | |
| SCHEMBL106916 | 0.82 | HTT (0.45) | CYP4F2CYP4A11 | |
| SCHEMBL12939496 | 0.81 | CYP4F2 (0.32) | CYP4F2CYP4A11 | |
| SCHEMBL1627910 | 0.81 | CYP4F2 (0.35) | CYP4F2CYP4A11 | |
| SCHEMBL13325049 | 0.81 | CYP4F2 (0.32) | CYP4F2CYP4A11 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 71 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180180996-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-20180181003-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE | FUJIFILM CORPORATION (JP) | 2018-06-28 | — | — | US | disclosed |
| US-9989847-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-06-05 | — | — | US | disclosed |
| US-9926462-B2 | Composition for forming liquid immersion upper layer film, and polymer | JSR CORPORATION (JP) | 2018-03-27 | — | — | US | disclosed |
| US-20170176862-A1 | PATTERN FORMING METHOD, COMPOSITION FOR FORMING PROTECTIVE FILM, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9665002-B2 | Onium salt compound, resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-05-30 | — | — | US | disclosed |
| US-20170073541-A1 | COMPOSITION FOR FORMING LIQUID IMMERSION UPPER LAYER FILM, AND POLYMER | JSR CORPORATION (JP) | 2017-03-16 | — | — | US | disclosed |
| US-9568824-B2 | Actinic-ray- or radiation-sensitive resin composition, resist film therefrom and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-02-14 | — | — | US | disclosed |
| US-9540535-B2 | Composition for forming liquid immersion upper layer film, and polymer | JSR CORPORATION (JP) | 2017-01-10 | — | — | US | disclosed |
| US-9458343-B2 | Method of forming patterns | FUJIFILM CORPORATION (JP) | 2016-10-04 | — | — | US | disclosed |
| US-20130045444-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-02-21 | — | — | US | disclosed |
| US-20130015562-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2013-01-17 | — | — | US | disclosed |
| US-20120273924-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120276485-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120196228-A1 | RESIST COMPOSITION AND PATTERNING PROCESS USING THE SAME | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-08-02 | — | — | US | disclosed |
| US-20120164577-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-06-28 | — | — | US | disclosed |
| US-20120135357-A1 | POLYMER, POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120135350-A1 | POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120088194-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-04-12 | — | — | US | disclosed |
| US-20120034559-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM THEREFROM AND METHOD OF FORMING PATTERN THEREWITH | FUJIFILM CORPORATION (JP) | 2012-02-09 | — | — | US | disclosed |