SCHEMBL106916

SCHEMBL106916

CCC(C)(C)C(=O)OCC(F)(F)F

nearest known ligand 0.45

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
HTT P42858 2/20 0.45
CYP4F2 P78329 1/20 0.36
CYP4A11 Q02928 1/20 0.36
HSD17B10 Q99714 2/20 0.32
MEN1 O00255 1/20 0.32
ALDH1A1 P00352 1/20 0.32
TSHR P16473 1/20 0.32
KMT2A Q03164 1/20 0.32
LMNA P02545 1/20 0.31
HMGCR P04035 1/20 0.31
RIPK1 Q13546 1/20 0.31
NPC1 O15118 1/20 0.30
RAB9A P51151 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
FABP7 O15540 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL14770505 0.87 CYP4F2 (0.36) HTTCYP4F2CYP4A11HSD17B10LMNA
SCHEMBL800418 0.87 HTT (0.38) HTTCYP4F2CYP4A11NPC1RAB9A
SCHEMBL17545708 0.85 HTT (0.37) HTTCYP4F2CYP4A11
SCHEMBL800518 0.85 CYP4F2 (0.35) HTTCYP4F2CYP4A11HSD17B10LMNA
SCHEMBL9973370 0.84 CYP4F2 (0.33) HTTCYP4F2CYP4A11
SCHEMBL13210007 0.84 HTT (0.36) HTTCYP4F2CYP4A11HSD17B10MEN1
SCHEMBL25935338 0.84 HTT (0.36) HTT
SCHEMBL17676419 0.83 CYP4F2 (0.34) CYP4F2CYP4A11HMGCR
SCHEMBL12939332 0.83 CYP4F2 (0.34) CYP4F2CYP4A11HMGCR
SCHEMBL10181613 0.83 CYP4F2 (0.34) CYP4F2CYP4A11HMGCR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 685 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20170373348-A1 NONAQUEOUS ELECTROLYTIC SOLUTION AND ENERGY STORAGE DEVICE USING THE SAME UBE INDUSTRIES, LTD (JP) 2017-12-28 US claimed
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-07-04 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2024-06-27 US disclosed
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-12-12 US disclosed
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-12-12 US disclosed
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-20230350290-A1 PATTERN FORMING METHOD, KIT, AND RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2023-11-02 US disclosed
US-20080008962-A1 Polymerizable ester compounds, polymers, resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. 2008-01-10 US disclosed
US-20080008960-A1 Mixture of an adamantane acrylic ester resin which becomes soluble in alkaline developer under action of an acid and sulfonium salt acid generator; microlithography with advantages of resolution, pattern density dependence and mask fidelity; use in precise microfabrication SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20080008961-A1 POSITIVE RESIST COMPOSITIONS AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-01-10 US disclosed
US-20070238029-A1 Underlayer Coating Forming Composition for Lithography Containing Naphthalene Ring Having Halogen Atom NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2007-10-11 US disclosed
US-20070231741-A1 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070231738-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-10-04 US disclosed
US-20070178405-A1 Positive resist composition and method of pattern formation with the same FUJI PHOTO FILM CO., LTD. 2007-08-02 US disclosed
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070160929-A1 photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography SHIN-ETSU CHEMICAL CO., LTD. 2007-07-12 US disclosed
US-20070134588-A1 Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition FUJIFILM CORPORATION (JP) 2007-06-14 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (7 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, LPAR1, TLR7 HTT 3918/4885CYP4F2 1598/4885CYP4A11 1265/4885
US-20240210824-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SCO2, CBR1, OXGR1 HTT 3041/4885CYP4F2 890/4885CYP4A11 783/4885
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern RER1, AFF1, AFF4 HTT 3191/4885CYP4F2 1438/4885CYP4A11 2063/4885
US-20240219830-A1 SALT, ACID GENERATOR, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN H1-0, HCN3, RER1 HTT 3074/4885CYP4F2 767/4885CYP4A11 495/4885
US-20070179309-A1 fluoro (meth)acrylate or unsaturated polycyclic ester monomer as radiation-sensitive resist compositions; good development characteristics; high resolution and an anti-swelling effect; low cost production; precise micropatterning AFF1, FASN, FAR1 HTT 2132/4885CYP4F2 1011/4885CYP4A11 2622/4885
US-11820736-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, H1-2 HTT 3017/4885CYP4F2 2956/4885CYP4A11 867/4885
US-11840503-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, H1-0, CA7 HTT 3542/4885CYP4F2 1143/4885CYP4A11 1039/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.