SCHEMBL16683152

SCHEMBL16683152

CCC(C)c1ccc(S(=O)(=O)c2ccc(S(=O)(=O)O)cc2)cc1

nearest known ligand 0.50

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
MEN1 O00255 3/20 0.48
KMT2A Q03164 3/20 0.48
ALDH1A1 P00352 4/20 0.47
KDM4E B2RXH2 2/20 0.47
TSHR P16473 2/20 0.42
GAA P10253 2/20 0.42
USP2 O75604 1/20 0.42
PKM P14618 1/20 0.42
HPGD P15428 1/20 0.42
ALOX15 P16050 1/20 0.42
HSD17B10 Q99714 1/20 0.42
LMNA P02545 2/20 0.41
MAPT P10636 1/20 0.41
CHRM2 P08172 2/20 0.40
CHRM1 P11229 2/20 0.40
HDAC4 P56524 1/20 0.40
HDAC2 Q92769 1/20 0.40
HDAC8 Q9BY41 1/20 0.40
NPSR1 Q6W5P4 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL116856 0.94 MEN1 (0.51) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL12086454 0.94 MEN1 (0.51) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL10031603 0.94 MEN1 (0.51) MEN1KMT2AALDH1A1KDM4ETSHR
Hydrochloric Acid SCHEMBL27560309 0.93 MEN1 (0.50) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL25678903 0.91 ALDH1A1 (0.47) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16683139 0.89 MEN1 (0.48) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL20802909 0.85 ALDH1A1 (0.56) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16081290 0.85 ALDH1A1 (0.50) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16683153 0.85 MEN1 (0.48) MEN1KMT2AALDH1A1KDM4ETSHR
SCHEMBL16591098 0.85 ALDH1A1 (0.50) MEN1KMT2AALDH1A1KDM4ETSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1 patent. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20150118628-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 US disclosed