SCHEMBL1682880

SCHEMBL1682880

O=C([O-])CC(C(=O)[O-])S(=O)(=O)O.[Sn+2]

nearest known ligand 0.42

Predicted protein targets (top 10)

geneUniProtsupporting neighboursconfidence
CA4 P22748 2/20 0.42
CTSL P07711 1/20 0.39
CA2 P00918 1/20 0.37
SLC22A16 Q86VW1 1/20 0.32
CYP3A4 P08684 2/20 0.31
TSHR P16473 2/20 0.31
NFKB1 P19838 2/20 0.31
NPSR1 Q6W5P4 2/20 0.31
CPT2 P23786 1/20 0.30
CPT1A P50416 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18492612 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
Silver SCHEMBL1860802 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
SCHEMBL187912 0.95 CA4 (0.46) CA4CTSLCA2SLC22A16CYP3A4
SCHEMBL2494695 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
SCHEMBL1860808 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
Potassium Ion SCHEMBL6055454 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
SCHEMBL5931239 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
Zinc Ion SCHEMBL5931298 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
SCHEMBL21962881 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4
SCHEMBL8993205 0.95 CA4 (0.42) CA4CTSLCA2SLC22A16CYP3A4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111641016-A Preparation method of surface electrode of ceramic filter 深圳第三代半导体研究院 2020-09-08 CN claimed
US-11993862-B2 Structure including copper plating layer or copper alloy plating layer ISHIHARA CHEMICAL CO., LTD. (JP) 2024-05-28 US disclosed
US-11946153-B2 Copper or copper alloy electroplating bath ISHIHARA CHEMICAL CO., LTD. (JP) 2024-04-02 US disclosed
US-11939691-B2 Tin or tin alloy electroplating bath, and electronic component having electrodeposit formed thereon using the plating bath ISHIHARA CHEMICAL CO., LTD. (JP) 2024-03-26 US disclosed
US-20220316085-A1 STRUCTURE INCLUDING COPPER PLATING LAYER OR COPPER ALLOY PLATING LAYER ISHIHARA CHEMICAL CO., LTD. (JP) 2022-10-06 US disclosed
US-20220127741-A1 COPPER OR COPPER ALLOY ELECTROPLATING BATH ISHIHARA CHEMICAL CO., LTD. (JP) 2022-04-28 US disclosed
US-10879116-B2 Method for copper plating through silicon vias using wet wafer back contact APPLIED MATERIALS, INC. (US) 2020-12-29 US disclosed
CN-111641016-A Preparation method of surface electrode of ceramic filter 深圳第三代半导体研究院 2020-09-08 CN disclosed
EP-2660826-B1 WHITE CONDUCTIVE POWDER, CONDUCTIVE MIXED POWDER, DISPERSION LIQUID, COATING MATERIAL, AND MEMBRANE COMPOSITION MITSUBISHI MAT ELECTRONIC CHEMICALS CO LTD (JP) 2018-07-04 EP disclosed
US-9935004-B2 Process and chemistry of plating of through silicon vias APPLIED MATERIALS, INC. (US) 2018-04-03 US disclosed
US-20100126849-A1 APPARATUS AND METHOD FOR FORMING 3D NANOSTRUCTURE ELECTRODE FOR ELECTROCHEMICAL BATTERY AND CAPACITOR APPLIED MATERIALS, INC. (US) 2010-05-27 US disclosed
US-6607653-B1 Tin-copper alloy plating bath, tin-copper-bismuth alloy plating bath or tin-copper-silver alloy plating bath containing a soluble metal compound and a specific sulfur-containing compound. The plating bath of the alloy with DAIWA FINE CHEMICALS CO., LTD. (JP) 2003-08-19 US disclosed
US-6544398-B2 For forming gold-tin alloy plating film; brightness; electronics ISHIHARA CHEMICAL CO., LTD (JP) 2003-04-08 US disclosed
US-20020063063-A1 Non-cyanide-type gold-tin alloy plating bath ISHIHARA CHEMICAL CO., LTD. (JP) 2002-05-30 US disclosed
EP-0501480-B1 Analysis of tin, lead or tin-lead alloy plating solution UYEMURA C & CO LTD (JP) 1997-05-28 EP disclosed
EP-0503389-B1 Process for electroless plating tin, lead or tin-lead alloy UYEMURA C & CO LTD (JP) 1997-05-14 EP disclosed
US-5294554-A Adding an oxidizing agent to decompose the copper/thiourea complex and oxidize the copper C. UYEMURA & CO., LTD. (JP) 1994-03-15 US disclosed
US-5248527-A On copper, measuring concentration of copper ions C. UYEMURA AND COMPANY, LIMITED (JP) 1993-09-28 US disclosed
EP-0503389-A2 Process for electroless plating tin, lead or tin-lead alloy C. UYEMURA & CO, LTD (JP) 1992-09-16 EP disclosed
EP-0501480-A2 Analysis of tin, lead or tin-lead alloy plating solution C. UYEMURA & CO, LTD (JP) 1992-09-02 EP disclosed