Predicted protein targets (top 18)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | TSHR | P16473 | 3/20 | 0.46 |
| ▸ | LMNA | P02545 | 1/20 | 0.46 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.39 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.39 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.37 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.37 |
| ▸ | MAPT | P10636 | 1/20 | 0.34 |
| ▸ | CDC45 | O75419 | 1/20 | 0.33 |
| ▸ | PTPRC | P08575 | 1/20 | 0.33 |
| ▸ | CDC25A | P30304 | 1/20 | 0.33 |
| ▸ | KDM4C | Q9H3R0 | 2/20 | 0.31 |
| ▸ | KDM4A | O75164 | 1/20 | 0.31 |
| ▸ | PHF8 | Q9UPP1 | 1/20 | 0.31 |
| ▸ | KDM2A | Q9Y2K7 | 1/20 | 0.31 |
| ▸ | LOX | P28300 | 1/20 | 0.30 |
| ▸ | LOXL3 | P58215 | 1/20 | 0.30 |
| ▸ | LOXL2 | Q9Y4K0 | 1/20 | 0.30 |
| ▸ | CYP3A4 | P08684 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28391494 | 1.00 | TSHR (0.46) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| SCHEMBL765938 | 1.00 | TSHR (0.46) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| SCHEMBL7948788 | 1.00 | TSHR (0.46) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| SCHEMBL22294687 | 1.00 | TSHR (0.46) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| SCHEMBL10434646 | 1.00 | TSHR (0.46) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| SCHEMBL4911816 | 1.00 | TSHR (0.46) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| SCHEMBL9803580 | 1.00 | TSHR (0.46) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| Hydrochloric Acid SCHEMBL27852088 | 0.97 | TSHR (0.44) | TSHRLMNACYP1A2MAPK1ALDH1A1 | |
| SCHEMBL364355 | 0.97 | — | — | |
| SCHEMBL127102 | 0.88 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| WO-2023283974-A1 | DEUTERATED AMMONIA PREPARATION METHOD AND DEUTERATION REACTION INVOLVING SAME AS DEUTERIUM SOURCE | 苏州大学 | 2023-01-19 | — | — | WO | claimed |
| CN-107540777-A | A kind of modified daiflon, its preparation method and application | 浙江省化工研究院有限公司 | 2018-01-05 | — | — | CN | claimed |
| WO-2023283974-A1 | DEUTERATED AMMONIA PREPARATION METHOD AND DEUTERATION REACTION INVOLVING SAME AS DEUTERIUM SOURCE | 苏州大学 | 2023-01-19 | — | — | WO | disclosed |
| CN-107540777-A | A kind of modified daiflon, its preparation method and application | 浙江省化工研究院有限公司 | 2018-01-05 | — | — | CN | disclosed |
| US-20120315449-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2012-12-13 | — | — | US | disclosed |
| US-20120301831-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-11-29 | — | — | US | disclosed |
| US-20120273924-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN USING THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-11-01 | — | — | US | disclosed |
| US-20120207978-A1 | ACTINIC-RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION | FUJIFILM CORPORATION (JP) | 2012-08-16 | — | — | US | disclosed |
| US-8227183-B2 | Stable formation of high precision fine patterns utilizing positive resist whose solubility increases in positive developer and decreases in negative developer upon irradiation | FUJIFILM CORPORATION (JP) | 2012-07-24 | — | — | US | disclosed |
| US-20120135355-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-05-31 | — | — | US | disclosed |
| US-20120088194-A1 | METHOD OF FORMING PATTERNS | FUJIFILM CORPORATION (JP) | 2012-04-12 | — | — | US | disclosed |
| US-20080292989-A1 | POSITIVE WORKING PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-27 | — | — | US | disclosed |
| US-20080274421-A1 | PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080241746-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-10-02 | — | — | US | disclosed |
| US-20080227025-A1 | Localized on resist film; peak area of a high molecular weight; flowability of immersion liquid in patterning by exposure; prevention of coating and development defects; resin has perfluoroalkyl, fluorinated alcohol, alkylsilyl structure, cyclic siloxane, sulfonimido and/or bis(carbonyl)methylene groups | FUJIFILM CORPORATION (JP) | 2008-09-18 | — | — | US | disclosed |
| US-20080220371-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080187860-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080187863-A1 | POSITIVE PHOTOSENSITIVE COMPOSITION, POLYMER COMPOUND USED FOR THE POSITIVE PHOTOSENSITIVE COMPOSITION, PRODUCTION METHOD OF THE POLYMER COMPOUND, AND PATTERN FORMING METHOD USING THE POSITIVE PHOTOSENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2008-08-07 | — | — | US | disclosed |
| US-20080171287-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-07-17 | — | — | US | disclosed |
| US-7368220-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2008-05-06 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080220371-A1 | PHOTOSENSITIVE COMPOSITION, COMPOUND USED FOR PHOTOSENSITIVE COMPOSITION AND PATTERN-FORMING METHOD USING PHOTOSENSITIVE COMPOSITION | RARA, RARB, RARG | TSHR 1939/4885LMNA 1699/4885CYP1A2 1055/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.