SCHEMBL16882425

SCHEMBL16882425

Cc1ccc2ccccc2c1-c1ccc2ccccc2c1C

nearest known ligand 0.63

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ TSHR P16473 4/20 0.63
▸ CYP1A2 P05177 4/20 0.63
▸ CYP2A6 P11509 3/20 0.63
▸ ALDH1A1 P00352 6/20 0.45
▸ DNMT1 P26358 1/20 0.44
▸ HSD17B10 Q99714 4/20 0.42
▸ HPGD P15428 3/20 0.42
▸ HIF1A Q16665 3/20 0.42
▸ MAPT P10636 2/20 0.42
▸ RAB9A P51151 2/20 0.42
▸ MAPK1 P28482 2/20 0.42
▸ CYP3A4 P08684 1/20 0.42
▸ CASP1 P29466 1/20 0.42
▸ CASP7 P55210 1/20 0.42
▸ ATM Q13315 1/20 0.42
▸ L3MBTL1 Q9Y468 1/20 0.42
▸ TDP1 Q9NUW8 1/20 0.42
▸ HSD11B1 P28845 1/20 0.42
▸ HPRT1 P00492 1/20 0.39
▸ MEN1 O00255 2/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29352216 0.83 TSHR (0.65) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
SCHEMBL2951616 0.83 TSHR (0.65) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
SCHEMBL7915042 0.82 DHFR (0.54) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
SCHEMBL2557210 0.82 CYP2A6 (0.54) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
Lithium SCHEMBL30066819 0.81 TSHR (0.62) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
SCHEMBL22729951 0.79 TSHR (0.47) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
SCHEMBL1451563 0.79 TSHR (0.60) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
SCHEMBL16062621 0.78 CYP2A6 (0.50) TSHRCYP1A2CYP2A6ALDH1A1DNMT1
SCHEMBL29736830 0.78 CYP2A6 (1.00) TSHRCYP1A2CYP2A6ALDH1A1HSD17B10
SCHEMBL28814927 0.78 CYP2A6 (1.00) TSHRCYP1A2CYP2A6ALDH1A1HSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9261788-B2 Compound for forming organic film, and organic film composition using the same, process for forming organic film, and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-02-16 — — US disclosed
US-9076738-B2 Composition for resist underlayer film, process for forming resist underlayer film, patterning process, and fullerene derivative SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-07 — — US disclosed
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