SCHEMBL16902885

SCHEMBL16902885

OCc1cccc(COCOc2cccc(CO)c2)c1

nearest known ligand 0.51

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TSHR P16473 1/20 0.51
SMN1; SMN2 Q16637 1/20 0.51
GPBAR1 Q8TDU6 1/20 0.48
CYSLTR1 Q9Y271 1/20 0.48
CYP4F2 P78329 2/20 0.46
CYP4A11 Q02928 2/20 0.46
MRGPRX4 Q96LA9 1/20 0.45
F2 P00734 4/20 0.44
FFAR1 O14842 2/20 0.42
MAOB P27338 3/20 0.42
KDR P35968 1/20 0.42
FYN P06241 1/20 0.41
PTPRC P08575 1/20 0.41
PTPN1 P18031 1/20 0.41
F10 P00742 1/20 0.40
BCHE P06276 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15723546 0.93 TSHR (0.48) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2
SCHEMBL16902891 0.85 TSHR (0.56) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2
SCHEMBL6667804 0.81 MRGPRX4 (0.51) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2
SCHEMBL16902835 0.81 APP (0.51) F2MAOB
SCHEMBL28893553 0.80 TSHR (0.59) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2
SCHEMBL29961933 0.80 TSHR (0.59) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2
SCHEMBL6088577 0.79 FYN (0.47) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2
SCHEMBL1135279 0.79 FYN (0.56) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2
SCHEMBL6782118 0.79 MRGPRX4 (0.44) TSHRSMN1; SMN2CYP4F2CYP4A11MRGPRX4
SCHEMBL31139262 0.78 TSHR (0.57) TSHRSMN1; SMN2GPBAR1CYSLTR1CYP4F2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9310681-B2 Negative resist composition and patterning process using same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-9310681-B2 Negative resist composition and patterning process using same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2016-04-12 US disclosed
US-20150198883-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-16 US disclosed
US-20150198883-A1 NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS USING SAME SHIN-ETSU CHEMICAL CO., LTD. (JP) 2015-07-16 US disclosed